| 1. |
- Adler, Niclas, et al.
(author)
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- 2002
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Reports (other academic/artistic)
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| 2. |
- Heshmati, Almas, et al.
(author)
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- 2013
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In: Research Evaluation. - : Oxford University Press (OUP). - 0958-2029 .- 1471-5449. ; 22:1, s. 15-29
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Journal article (peer-reviewed)abstract
- This article introduces an agent-based simulation model representing the dynamic processes of cooperative R&D in the manufacturing sector of South Korea. Firms’ behaviors were defined according to empirical findings on a data set from the internationally standardized Korean Innovation Survey in 2005. Simulation algorithms and parameters were defined based on the determinants of firms’ likelihood to participate in cooperation with other firms when conducting innovation activities. The calibration process was conducted to the point where artificially generated scenarios were equivalent to the one observed in the real world. The aim of this simulation game was to create a basic implementation that could be extended to test different policies strategies in order to observe sector responses (including cross-sector spillovers) when promoting cooperative innovation. Based on the evaluation of simulated research collaboration data, sector responses to strategies concerning government intervention in R&D of the firms can now be assessed.
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| 3. |
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| 4. |
- Simchi, H., et al.
(author)
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Transparent Back Contacts for Superstrate (AG,CU)(IN,GA)SE2 Thin Film Solar Cells
- 2015
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In: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 5:1, s. 406-409
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Journal article (peer-reviewed)abstract
- Molybdenum oxide (MoO3) and tungsten oxide (WO3) are considered as transparent back contacts for (Ag,Cu)(In,Ga)Se-2 thin film solar cells. MoO3 and WO3 films were deposited by reactive RF sputtering at room temperature in an Ar/O-2 ambient on (Ag,Cu)(In,Ga) Se-2 absorber layers with various Ga/(Ga + In) and Ag/(Ag + Cu) ratios. Determination of the valence band offsets by XPS showed that Ag-alloying of absorber layer changes the energy band alignment at the absorber-back contact interface with MoO3 and WO3 contacts. This produces a primary contact with lower valence band offset compared with Cu(In,Ga) Se-2 counterparts. The effect is less significant in films with Ga > 0.5 and Ag > 0.5 (corresponding to E-g > 1.4 eV) probably due to the different nature of ordered vacancy compounds forming near the surface phases.
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