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Search: (WFRF:(Shin J. I.)) srt2:(2005-2009) > (2007)

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  • Shin, J. H., et al. (author)
  • IA-2 autoantibodies in incident type I diabetes patients are associated with a polyadenylation signal polymorphism in GIMAP5
  • 2007
  • In: Genes Immun. - : Springer Science and Business Media LLC. - 1466-4879 .- 1476-5470. ; 8:6, s. 503-12
  • Journal article (peer-reviewed)abstract
    • In a large case-control study of Swedish incident type I diabetes patients and controls, 0-34 years of age, we tested the hypothesis that the GIMAP5 gene, a key genetic factor for lymphopenia in spontaneous BioBreeding rat diabetes, is associated with type I diabetes; with islet autoantibodies in incident type I diabetes patients or with age at clinical onset in incident type I diabetes patients. Initial scans of allelic association were followed by more detailed logistic regression modeling that adjusted for known type I diabetes risk factors and potential confounding variables. The single nucleotide polymorphism (SNP) rs6598, located in a polyadenylation signal of GIMAP5, was associated with the presence of significant levels of IA-2 autoantibodies in the type I diabetes patients. Patients with the minor allele A of rs6598 had an increased prevalence of IA-2 autoantibody levels compared to patients without the minor allele (OR=2.2; Bonferroni-corrected P=0.003), after adjusting for age at clinical onset (P=8.0 x 10(-13)) and the numbers of HLA-DQ A1*0501-B1*0201 haplotypes (P=2.4 x 10(-5)) and DQ A1*0301-B1*0302 haplotypes (P=0.002). GIMAP5 polymorphism was not associated with type I diabetes or with GAD65 or insulin autoantibodies, ICA, or age at clinical onset in patients. These data suggest that the GIMAP5 gene is associated with islet autoimmunity in type I diabetes and add to recent findings implicating the same SNP in another autoimmune disease.
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3.
  • Kim, T., et al. (author)
  • Strain-engineered magnetic anisotropy of GaMnAs ferromagnetic semiconductors
  • 2007
  • In: Journal of the Korean Physical Society. - : Korean Physical Society. - 0374-4884 .- 1976-8524. ; 50:3, s. 829-833
  • Journal article (peer-reviewed)abstract
    • A series of GaMnAs epilayers grown on GaInAs buffer layers have been investigated. The concentrations of Mn in the GaMnAs layer and In in the GaInAs layer were varied in the series, for which the tensile strain condition for the GaMnAs layer are systematically changed. The X-ray measurement provided the lattice constants of the layers, from which the stain of the GaMnAs layer was determined. The magneto-transport data revealed in-plane anisotropy in the GaMnAs sample grown on a GaInAs buffer with a low concentration of In. Such in-plan magnetic anisotropy of the GaMnAs layer continuously changed to a vertical magnetic anisotropy when the tensile strain was increased in the sample grown on the GaInAs buffer with a higher In concentration. This experiment clearly demonstrated that the magnetic anisotropy of GaMnAs could be continuously engineered by using the strain introduced by the GaInAs buffer layers.
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