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Träfflista för sökning "(WFRF:(Sjöblom Gustaf)) srt2:(2002-2004)"

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1.	Lujan, G S, et al. (author) Interface passivation mechanisms in metal gated oxide capacitors 2004 In: Proc of the 34th ESSDERC. Conference paper (other academic/artistic)
2.	Sjöblom, Gustaf, et al. (author) Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates 2003 In: Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA. ; , s. 215-217 Conference paper (peer-reviewed)
3.	Westlinder, Jörgen, et al. (author) Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric 2003 In: Proceedings of ESSDERC. ; , s. 525-528, s. 525-528 Conference paper (peer-reviewed)
4.	Westlinder, Jörgen, et al. (author) Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes 2004 In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 75:4, s. 389-396 Journal article (peer-reviewed)abstract A substantial shift in the work function of TiNx by as much as 0.7 eV is achieved by varying the nitrogen gas flow during the reactive sputter deposition of the metal gate, which indicates tunability for replacing poly-Si in a CMOS process. TiNx MOS capacitors having multiple SiO2 thicknesses have been evaluated and the work function of TiNx can be altered from 4.2 to 4.9 eV depending on the nitrogen content. The values are stable after RTP annealing up to 600 °C in nitrogen gas for 30 s, although annealing at 800 °C changes the work function for the different compositions towards a mid-gap value. No variation in EOT with annealing temperature is observed for the TiNx/SiO2 stacks deposited at high nitrogen gas flow. The change in work function appears not to be correlated to the crystalline orientation of the TiNx. The work function is instead believed to be affected by extrinsic states in the metal/dielectric interface.
5.	Wu, Dongping, et al. (author) A Novel Strained Si0.7Ge0.3 Surface-Channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack 2003 In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 24:3, s. 171-173 Journal article (peer-reviewed)
6.	Wu, D, et al. (author) ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs 2003 In: Proceedings of 33th ESSDERC2003. ; , s. 263-266 Conference paper (peer-reviewed)
7.	Wu, D, et al. (author) Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3 2002 In: IEEE SISC, December. Conference paper (peer-reviewed)

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Result 1-7 of 7

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Type of publication: conference paper (5); journal article (2)

Type of content: peer-reviewed (6); other academic/artistic (1)

Author/Editor: Sjöblom, Gustaf (7); Olsson, Jörgen (6); Blom, Hans-Olof (3); Hellström, Per-Erik (2); Persson, S (2); Zhang, Shi-Li (2); show more...; Östling, M (2); Wu, D. (2); Zhang, S-L (2); Lindgren, A. C. (2); Wu, Dongping (2); Vainonen-Ahlgren, E. (2); Westlinder, Jörgen (2); Li, W. M. (2); Tuominen, M. (2); Tois, E. (2); Persson, Stefan (1); Kubicek, S (1); Hellberg, P.-E. (1); De Gendt, S (1); Schram, T (1); Witters, T (1); von Haartman, Martin (1); Seger, Johan (1); Lujan, G S (1); De Meyer, K (1); Lindgren, Ann Chatri ... (1); Östling, Mikeal (1); Hellström, P-E (1); show less...

University: Uppsala University (7)

Language: English (7)

Research subject (UKÄ/SCB): Engineering and Technology (6)

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