| 1. |
- Liu, Juanjuan, et al.
(author)
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Electrically injected GaAsBi/GaAs single quantum well laser diodes
- 2017
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In: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 7:11, s. Article Number: 115006 -
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Journal article (peer-reviewed)abstract
- We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.
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| 2. |
- Wang, Shu Min, 1963, et al.
(author)
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Electrically pumped GaAsBi laser diodes
- 2017
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In: International Conference on Transparent Optical Networks. - 2162-7339. - 9781538608586
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Conference paper (peer-reviewed)abstract
- In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 μm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.
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| 3. |
- Yue, Li, et al.
(author)
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Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
- 2017
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In: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388. ; 695, s. 753-759
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Journal article (peer-reviewed)abstract
- We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on GaAs and demonstrate the effect experimentally. Type II InGaAs/GaAsBi QWs were grown using molecular beam epitaxy. Room temperature photoluminescence confirms wavelength extension to 1230 nm, 82 and 208 nm longer than that of the type I GaAsBi and InGaAs QW with the same Bi or In content, respectively. The PL intensity is enhanced by more than ten times than the GaAsBi QW. Our results show that the type II dilute bismide QW has potentials for making telecom lasers on GaAs.
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