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- Baghdadi, Reza, 1984, et al.
(author)
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Study of in-plane electrical transport anisotropy of alpha-axis oriented YBa2Cu3O7-delta nanodevices
- 2017
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In: Physical Review B. - 2469-9969 .- 2469-9950. ; 95:18, s. Article no. 184505-
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Journal article (peer-reviewed)abstract
- In the present work, we report the growth of fully untwinned high-quality a-axis-oriented YBa2Cu3O7-delta films on (100) SrLaGaO4 substrates by using PrBa2Cu3O7-delta as a buffer layer. We also fabricated nanowires at different angles gamma with respect to the [0,1,0] direction of the substrate and studied the in-plane anisotropy of the critical current density, which we explained by considering the anisotropy in the coherence length xi and London penetration depth lambda L. Finally, half-integer Shapiro-like steps measured in slightly underdoped c-axis oriented (gamma = 90 degrees) nanowires point towards a different transport regime, which could shed light on intriguing issues of high-critical-temperature superconductors.
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| 2. |
- Trabaldo, Edoardo, 1990, et al.
(author)
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Noise Properties of YBCO Nanostructures
- 2017
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In: IEEE Transactions on Applied Superconductivity. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-2515 .- 1051-8223. ; 27:4
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Journal article (peer-reviewed)abstract
- Voltage noise measurements on close to optimally doped YBa2Cu3O7-delta nanostructures have been performed. The measured resistance noise at temperature T = 96 K (above critical temperature T-C = 85 K) shows a quadratic dependence on the bias current, e.g., the voltage power spectral density S-V alpha V-2. Moreover, the normalized voltage noise S-V/V-2 is inversely proportional to the device volume. This is a clear indication that the noise is the result of an ensemble of independent resistive fluctuators, evenly distributed within the sample volume. For our structures, we obtain a product S-V/V-2 x Vol. = const. approximate to 6 x 10-(33) m(3)/Hz resulting in a Hooge's parameter 3.4 x 10(-4), which is among the lowest reported in literature. At lower temperature, T = 2 K (well below TC) the total voltage fluctuations are given by the combined effect of critical current fluctuations and resistance fluctuations. For the critical current noise, we obtain a product S-I/IC2 x Vol. = const. approximate to 6x10(-32) m(3)/Hz. The larger value of the relative critical current noise is most probably due to the fact that the critical current is determined by edge effects whereas the resistance is given by the total volume of the device.
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