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- Stenman, U H, et al.
(author)
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Summary report of the TD-3 workshop: characterization of 83 antibodies against prostate-specific antigen
- 1999
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In: Tumor Biology. - : Springer Science and Business Media LLC. - 1423-0380 .- 1010-4283. ; 20:Suppl. 1, s. 1-12
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Journal article (peer-reviewed)abstract
- Twelve research groups participated in the ISOBM TD-3 Workshop in which the reactivity and specificity of 83 antibodies against prostate-specific antigen (PSA) were investigated. Using a variety of techniques including cross-inhibition assays, Western blotting, BIAcore, immunoradiometric assays and immunohistochemistry, the antibodies were categorized into six major groups which formed the basis for mapping onto two- and three-dimensional (2-D and 3-D) models of PSA. The overall findings of the TD-3 Workshop are summarized in this report. In agreement with all participating groups, three main antigenic domains were identified: free PSA-specific epitopes located in or close to amino acids 86-91; discontinuous epitopes specific for PSA without human kallikrein (hK2) cross-reactivity located at or close to amino acids 158-163; and continuous or linear epitopes shared between PSA and hK2 located close to amino acids 3-11. In addition, several minor and partly overlapping domains were also identified. Clearly, the characterization of antibodies from this workshop and the location of their epitopes on the 3-D model of PSA illustrate the importance of selecting appropriate antibody pairs for use in immunoassays. It is hoped that these findings and the epitope nomenclature described in this TD-3 Workshop are used as a standard for future evaluation of anti-PSA antibodies.
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- Hakansson, M C, et al.
(author)
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The electronic structure of In- and As-terminated InAs(001) surfaces
- 1997
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In: Surface Science. - 0039-6028 .- 1879-2758. ; 374:1-3, s. 73-79
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Journal article (peer-reviewed)abstract
- The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
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| 8. |
- Nilsson, P. O., et al.
(author)
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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
- 1995
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52, s. R8643-
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Journal article (peer-reviewed)abstract
- It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.
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- Andersson, C B M, et al.
(author)
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Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy
- 1996
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In: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 347:1-2, s. 199-206
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Journal article (peer-reviewed)abstract
- Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs((111) over bar)2 x 2 and InSb((111) over bar)2 x 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.
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