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- Berggren, Magnus, et al.
(author)
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Light-emitting diodes with variable colours from polymer blends
- 1994
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In: Nature. - : Nature Publishing Group. - 0028-0836 .- 1476-4687. ; 372:6505, s. 444-446
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Journal article (peer-reviewed)abstract
- THE range of materials now available for polymer-based light-emitting diodes (LEDs) is such that electroluminescence can be obtained throughout the visible spectrum(1-12). Here we show that, by blending polymers with different emission and charge-transport characteristics, LEDs can be fabricated in which the emission colour varies as a function of the operating voltage. This phenomenon arises from the self-organizing properties of the blends, in which entropy drives phase separation of the constituent polymers and gives rise to submicrometre-sized domains having a range of compositions and emission characteristics. Emission from domains of different composition is controlled by the ease with which charge is injected, which in turn depends on the applied voltage.
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- Berggren, Magnus, et al.
(author)
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White light from an electroluminescent diode made from poly[3(4‐octylphenyl)‐2,2′‐bithiophene] and an oxadiazole derivative
- 1994
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 76:11, s. 7530-7534
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Journal article (peer-reviewed)abstract
- We report on an electroluminescent diode emitting red, green, and blue light simultaneously. The device is based on a thin polymer layer, poly[3‐(4‐octylphenyl)‐2,2′‐bithiophene] and a thick molecular layer, 2‐(4‐biphenylyl)‐5‐(4‐tertbutyl‐phenyl)1,3,5‐oxadiazole. The quantum efficiency for light conversion is 0.3% and the turn‐on voltage for light emission is 7 V. In this article we present electric and spectroscopic characterizations. A mechanism for the light emission, based on electron and hole recombination between the two organic layers, is proposed
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- Ragnarsson, Lars-Åke, 1968, et al.
(author)
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Low temperature oxides deposited by remote plasma enhanced CVD
- 1994
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In: Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94). ; , s. 117-
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Journal article (peer-reviewed)abstract
- A remote plasma enhanced chemical vapor deposition (RPECVD) process was used to prepare SiO2-Si structures at ~300°C. The best midgap interface trap densities, Ditm, as obtained by C-V techniques are 6-8×1010 cm-2eV-1 for SiO2-Si(100) and 2-3×1011 cm-2eV-1 for SiO2-Si(111)
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