| 1. |
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| 2. |
- Gutt, T., et al.
(author)
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PECVD and thermal gate oxides on 3C vs. 4H SiC : Impact on leakage, traps and energy offsets
- 2015
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In: ECS Journal of Solid State Science and Technology. - : Electrochemical Society Inc.. - 2162-8769 .- 2162-8777. ; 4:9, s. M60-M63
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Journal article (peer-reviewed)abstract
- Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C-SiC and 4H-SiC were compared. The difference in trap energy distributions between the polytypes confirmed the lesser 3C-SiC polytype vulnerability to near-interface traps (NIT), which are alternatively found in high density in the 4H-SiC. It was also shown that the quality of the PECVD oxides obtained in this experiment were comparable to that of the thermal oxide. Only a slight increase of leakage current was observed in the PECVD oxides due to oxide inhomogeneity in the lower electric field interval of the Fowler-Nordheim range. Finally, the energy band model of the SiC MOS devices was described quantitatively for different combinations of polytype and oxidation method, which illustrated the influence of technological processing on the energy offsets and potentials, and could be used for further development of the devices and processes. © The Author(s)
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| 3. |
- Lang, Jenny, et al.
(author)
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Reliability study of a RF power amplifier with GaN-on-SiC HEMTs
- 2016
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In: ECS Transactions. - Pennington, N.J. : The Electrochemical Society. - 9781607685395 ; , s. 49-59
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Conference paper (peer-reviewed)abstract
- RF power amplifier demonstrators containing each one GaN-on- SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat noleads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of lead-free solders (Sn63Pb36Ag2 and SnAgCu (SAC305)) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
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| 4. |
- Lang, Jenny, et al.
(author)
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Reliability Study of GaN-onSiC HEMT RF Power Amplifiers
- 2018
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In: Advances in Technology Innovation. ; 3:4, s. 157-165
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Journal article (peer-reviewed)abstract
- The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMSin SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) andevaluated electrically, thermally and structurally. Two types of solders, Sn63Pb36Ag2 and lead-free SnAgCu(SAC305), and two types of TIM materials, NanoTIM and TgonTM 805, for PCB attachment to the liquid cold platewere tested for thermo-mechanical reliability. Changes in the electrical performance of the devices, namely thereduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation ofthe HF performance were observed as a result of an accumulated current stress during PC. No significant changes inthe investigated solder or TIM materials were observed.
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| 5. |
- Lang, Jenny, et al.
(author)
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Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs
- 2017
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In: Materials Science Forum. - : Trans Tech Publications. - 9783035710434 ; , s. 715-718
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Conference paper (peer-reviewed)abstract
- RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015AQEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermomechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
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| 6. |
- Toth-Pal, Zsolt, et al.
(author)
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Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrate
- 2015
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In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014. - : Trans Tech Publications Inc.. - 9783038354789 ; 821-823, s. 452-455
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Conference paper (peer-reviewed)abstract
- Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.
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