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Träfflista för sökning "WFRF:(Beccard R.) srt2:(2001)"

Search: WFRF:(Beccard R.) > (2001)

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  • Valcheva, E., et al. (author)
  • Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
  • 2001
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:12, s. 6011-6016
  • Journal article (peer-reviewed)abstract
    • Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<1017 cm-3), and improved strain relaxation. © 2001 American Institute of Physics.
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2.
  • Valcheva, E., et al. (author)
  • Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
  • 2001
  • In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 35-38
  • Journal article (peer-reviewed)abstract
    • Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Persson, Per (2)
Abrashev, M. V. (2)
Paskova, Tanja (2)
Paskov, Plamen (2)
Valcheva, E (2)
Monemar, Bo (2)
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Heuken, M (2)
Goldys, E.M. (2)
Beccard, R (2)
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University
Linköping University (2)
Language
English (2)
Year
2001 (2)Undo refine

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