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Träfflista för sökning "WFRF:(Bryllert Tomas 1974) srt2:(2005-2009)"

Search: WFRF:(Bryllert Tomas 1974) > (2005-2009)

  • Result 1-10 of 26
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1.
  • Emadi, Arezoo, 1977, et al. (author)
  • Design, Fabrication and characterisation of High Power HBV Diodes
  • 2005
  • In: 16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.). ; , s. Session: P05-04
  • Conference paper (peer-reviewed)abstract
    • We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
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3.
  • Bryllert, Tomas, et al. (author)
  • 11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
  • 2005
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:3, s. 131-132
  • Journal article (peer-reviewed)abstract
    • A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs=InAlAs=AlAs epitaxial layers on an InP substrate.
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4.
  • Olsen, Arne, 1974, et al. (author)
  • Compact frequency sources using high-order multipliers
  • 2009
  • In: 5th ESA Workshop on Millimetre Wave Technology and Applications. ; , s. 189-193
  • Conference paper (peer-reviewed)abstract
    • High-order multipliers are a suitable method for making compact frequency sources for high frequencies (> 100 GHz). A fixed frequency phased-locked source, where a fundamental source is multiplied up using among an in-house varactor diode multiplier, has a low phase noise and will be described in this article. These multipliers are based on the Heterostructure Barrier Varactor (HBV) diode, and can either triple or quintuple the frequency. Fixed frequencies from 90 to 220 GHz can be produced by using a combination of only one diode multiplier and a common source unit. A design rule for next generation of multipliers, where the power handling is emphasised, is also included. These multipliers will take the signal source up to a frequency of 500 GHz.
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5.
  • Olsen, Arne, 1974, et al. (author)
  • HBV Frequency Quintuplers
  • 2005
  • In: 16th International Symposium on Space Terahertz Technology.
  • Conference paper (peer-reviewed)abstract
    • A 500 GHz heterostructure-barrier-varactor quintupler has been designed and fabricated. The design consists of a mixture of waveguide and microstrip components for impedance matching. A InP based HBV diode is flip-chip mounted onto the quartz circuit, where beam-leads are used for ground connections to the waveguide block. Extensive back-side processing has been carried out in order to create these beam-leads. The multiplier is a frequency scaled version of a successful 100 GHz quintupler with a conversion efficiency of 11.4%.
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6.
  • Sobis, Peter, 1978, et al. (author)
  • Compact 340 GHz Receiver Front-Ends
  • 2009
  • In: 20th International Symposium on Space Terahertz Technology. ; , s. 183-189
  • Conference paper (peer-reviewed)abstract
    • A compact 340 GHz room temperature receiver front-end has been developed consisting of a subharmonic Schottky diode mixer module with an integrated LNA. A novel sideband separation topology has been evaluated by using a pair of the developed mixers interconnected by external waveguide branch guide coupler hybrids for the LO and RF feedings and coaxial IF hybrids, measuring sideband suppression levels of 5 dB to 15 dB over the 315-365 GHz band.For efficient LO pumping of the sideband separating mixer, a novel high power LO chain based on a 5 x 34 GHz HBV quintupler (170 GHz LO source) has been developed with an ultra compact mechanical block housing, not much larger then a waveguide flange. We have also looked into a broadband medium LO power source consisting of a W-band active multiplier module, based on commercial MMIC chips from Hittite, followed by a medium power Schottky doubler from VDI.The demonstrated compact receiver front end has a considerably reduced size and weight owing to the high multiplication factor of the compact LO chain and mixer with integrated LNA. The novel sideband separating topology that uses 90 degree hybrids for both LO and RF resolves the standing wave issue of a previously proposed topology, in which a matched Y-junction was used as an RF hybrid and a branch guide coupler with a 45 degree differential line phase shifter at the output, was used for the LO feeding. The proposed topology improves both the sideband suppression and reduces the standing waves at the LO and RF ports.
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7.
  • Stake, Jan, 1971, et al. (author)
  • Development of high power HBV multipliers for millimeter wave applications
  • 2007
  • In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819468970 ; 6739, s. 67390U-
  • Conference paper (peer-reviewed)abstract
    • We present a high-power frequency tripler for 110 GHz and a quintupler for 200-210 GHz. The tripler (×3), that is based on a single HBV diode, produces 240 mW of output power with a 3-dB bandwidth of 6%. This is the highest output power ever recorded for an HBV based multiplier irrespective of output frequency. The module features an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present an HBV quintupler (×5) that delivers more than 20 mW at 202 GHz.
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8.
  • Stake, Jan, 1971, et al. (author)
  • Heterostructure Barrier Varactor Quintuplers for Terahertz Applications
  • 2008
  • In: Proceedings of the 3rd European Microwave Integrated Circuit Conference. - 9782874870071 ; , s. 206-209
  • Conference paper (peer-reviewed)abstract
    • We present progress and status of Heterostructure Barrier Varactor quintupler sources for 170 GHz and 210 GHz (G-band). The source modules feature an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present progress on design and fabrication of integrated HBV circuits for terahertz applications.
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9.
  • Vukusic, Josip, 1972, et al. (author)
  • HBV tripler with 21% efficiency at 102 GHz
  • 2006
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194. ; 42:6, s. 355-356
  • Journal article (peer-reviewed)abstract
    • An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fabricated. Embedded on a circuit in a multiplier block, the system exhibits state-of-the-art, flange-to-flange efficiency of 21% at 102 GHz. The maximum output power was 32 mW, which could be further increased by scaling and integration of the device.
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  • Result 1-10 of 26

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