SwePub - search: WFRF:(Cherkaoui Karim)

Enumeration	Reference	Cover	Find
1.	Buiu, Octavian, et al. (author) Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation 2007 In: Microelectronics Reliability. ; 47, s. 678- Journal article (peer-reviewed)
2.	Engström, Olof, 1943, et al. (author) Navigation aids in the search for future high-k dielectrics: Physical and electrical trends 2007 In: Solid State Electronics. ; 51, s. 622- Journal article (peer-reviewed)
3.	Engström, Olof, 1943, et al. (author) Navigation aids in the search for future high-k dielectrics: physical and electrical trends 2006 In: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118 Journal article (peer-reviewed)abstract From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

Skapa referenser, mejla, bekava och länka

Träfflista för sökning "WFRF:(Cherkaoui Karim) srt2:(2006-2009)"