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- Forsberg, U., et al.
(författare)
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Aluminum doping of epitaxial silicon carbide
- 2003
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 253:04-jan, s. 340-350
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Tidskriftsartikel (refereegranskat)abstract
- Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50degreesC. The highest atomic concentration of aluminum observed in this study was 3 x 10(17) and 8 x 10(18) cm(-3) in Si and C-face, respectively.
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| 5. |
- Forsberg, U, et al.
(författare)
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Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
- 2002
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS. ; , s. 203-206
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Konferensbidrag (refereegranskat)abstract
- Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.
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- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
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Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
- 2002
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Ingår i: Phys. Stat. Sol. (c), Vol. 0, Issue 1. - : Wiley. ; , s. 205-208
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Konferensbidrag (refereegranskat)abstract
- In this study we report the successful growth of AlN and AlN/GaN on SiC substrates in a MOCVD process based on a hot-wall susceptor design. Different features of AlN growth are established depending on the total reactor pressure, temperature, off-cut SiC substrate orientation and V-to-III gas-flow ratio. The feasibility of the hot-wall MOCVD concept is demonstrated by the performance of AlN/GaN structures with state-of-the-art properties with strong potential for further optimization. A narrower X-ray rocking curve over the asymmetric 10.4 than the symmetric 00.2 reflection clearly underlines the high overall crystal quality of the GaN layers on AlN buffers grown in this type of MOCVD reactor.
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- Mahdavi, Jafar, et al.
(författare)
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Helicobacter pylori SabA adhesin in persistent infection and chronic inflammation
- 2002
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Ingår i: Science. - : American Association for the Advancement of Science. - 0036-8075 .- 1095-9203. ; 297:5581, s. 573-578
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Tidskriftsartikel (refereegranskat)abstract
- Helicobacter pylori adherence in the human gastric mucosa involves specific bacterial adhesins and cognate host receptors. Here, we identify sialyl-dimeric-Lewis x glycosphingolipid as a receptor for H. pylori and show that H. pylori infection induced formation of sialyl-Lewis x antigens in gastric epithelium in humans and in a Rhesus monkey. The corresponding sialic acid-binding adhesin (SabA) was isolated with the "retagging" method, and the underlying sabA gene (JHP662/HP0725) was identified. The ability of many H. pylori strains to adhere to sialylated glycoconjugates expressed during chronic inflammation might thus contribute to virulence and the extraordinary chronicity of H. pylori infection.
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- Melgar, S, et al.
(författare)
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Over-expression of interleukin 10 in mucosal T cells of patients with active ulcerative colitis.
- 2003
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Ingår i: Clinical and Experimental Immunology. - 0009-9104 .- 1365-2249. ; 134:1, s. 127-37
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Tidskriftsartikel (refereegranskat)abstract
- Ulcerative colitis (UC), a chronic inflammatory bowel disease, exhibits pronounced increase of T lymphocytes in the inflamed mucosa. To understand the role of intestinal T lymphocytes in the pathogenesis of UC their cytokine production in the mucosa was analysed. Intestinal T lymphocytes of UC, Crohn's disease and control patients were analysed for cytokine mRNA levels by real-time quantitative reverse transcription-polymerase chain reaction (RT-PCR) directly after isolation without in vitro stimulation. Frequencies of cytokine positive cells were determined in UC and control colon by immunomorphometry. T lymphocytes in normal colon expressed interleukin (IL)-2, interferon (IFN)-gamma, tumour necrosis factor (TNF)-alpha and transforming growth factor (TGF)-beta1, but not IL-4, IL-5 or IL-10. In UC, a highly significant increase in IL-10 mRNA levels in T lymphocytes and an increased frequency of IL-10 positive cells was seen in colon. IL-10 mRNA levels were also elevated in T lymphocytes of the non-inflamed ileum and correlated with disease activity at both locations. CD4+ T lymphocytes were the major source of IL-10 mRNA. IL-2, IFN-gamma and TNF-alpha mRNA levels were decreased in colonic T lymphocytes, and virtually no IL-2, IFN-gamma, TNF-alpha or TGF-beta positive cells were detected in basal lymphoid aggregates. However, scattered IL-10 positive cells were found here. Lamina propria outside the aggregates contained IL-10-, IFN-gamma, TNF-alpha and TGF-beta but not IL-2 positive cells. T cells of UC patients did not express IL-4 or IL-5. Taken, together the data suggest a generalized activation of IL-10 producing CD4+ T cells along the intestine of UC patients. The local environment seems to determine the biological consequences of elevated IL-10.
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