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- Gatty, Hithesh K., et al.
(author)
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Temporary wafer bonding and debonding by an electrochemically active polymer adhesive for 3D integration
- 2013
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In: Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on. - New York : IEEE. - 9781467356541 ; , s. 381-384
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Conference paper (peer-reviewed)abstract
- Thin wafer handling is an important issue in 3D integration technologies. This paper reports on an efficient method for bonding a thin wafer and debonding it at room temperature from a carrier wafer. This method addresses the major problem of fragility and flexibility in handling of thin wafers used in TSV fabrication. In the presented method the carrier wafer is spin coated with an electrochemically active polymer adhesive. It is then bonded to a device wafer. The wafer stack is thinned and finally released from the carrier wafer by applying a voltage.
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| 2. |
- Gatty, Hithesh K., et al.
(author)
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Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive
- 2014
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In: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 3:5, s. P115-P121
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Journal article (peer-reviewed)abstract
- The use of thin silicon wafers is an enabling technology for 3D integration in the semiconductor industry. However, thin silicon wafers are fragile to handle and reliable solutions are required for thin wafer handling. This paper reports a novel method of bonding and debonding a thin wafer (< 50 mu m) using an electrochemically active polymer adhesive. In the presented method the carrier wafer is first spin coated with the adhesive and then bonded to the device wafer by applying force and temperature. Debonding of the wafer is realized at room temperature by applying a voltage between the carrier and the device wafer, which substantially reduces the bond strength. The bonding and debonding properties of the adhesive show that temporary wafer bonding using electrochemically active adhesives has the potential to be an attractive approach for temporary wafer bonding for thin wafer handling in 3D integration processes.
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| 3. |
- Pardon, Gaspard, 1983-, et al.
(author)
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Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores
- 2013
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In: Nanotechnology. - : Institute of Physics (IOP). - 0957-4484 .- 1361-6528. ; 24:1, s. 015602-
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Journal article (peer-reviewed)abstract
- Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 mu m thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.
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