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- Hong, J., et al.
(author)
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Plasma chemistries for high density plasma etching of SiC
- 1999
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In: Journal of Electronic Materials. - Charlottesville, VA, USA. - 0361-5235 .- 1543-186X. ; 28:3, s. 196-201
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Journal article (peer-reviewed)abstract
- A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 Όm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.
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- Mottola, S, et al.
(author)
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The slow rotation of 253 Mathilde
- 1995
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In: PLANETARY AND SPACE SCIENCE. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0032-0633. ; 43:12, s. 1609-1613
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Journal article (peer-reviewed)abstract
- CCD photometry of the NEAR mission fly-by target 253 Mathilde is presented. Measurements taken during 52 nights of observations, from February to June 1995, allow a rotation period of 17.406 +/- 0.010 days and a lightcurve amplitude of 0.45 +/- 0.02 mag t
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