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- Paskova, T., et al.
(author)
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6H-SiC crystallinity behaviour upon B implantation studied by Raman scattering
- 1998
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In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97. - : Trans Tech Publications Inc.. - 0878497900 ; , s. 741-744
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Conference paper (peer-reviewed)abstract
- In this study, B ion implantation was performed in n-type 6H-SiC single crystals at 500 degrees C. The implanted specimens were annealed at 1700 degrees C in SiH4 atmosphere. Lattice damage induced by implantation and its recovery was characterised by Raman scattering. Reduced damage compared with other ions implantation was observed. Recrystallization of the implanted material and absence of amorphous phases was detected after high temperature annealing.
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- Danielsson, Erik, et al.
(author)
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Thermal stability of sputtered TiN as metal gate on 4H-SiC
- 1998
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 264-268:PART 2, s. 805-808
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Journal article (peer-reviewed)abstract
- MOS-structures were made with TiN as metal gate on 4H-SiC. The thermal stability and electrical properties of this gate was determined by CV-measurements. Comparison with Al gates showed that TiN worked well as a gate metal on 4H-SiC. The hysteresis and density of the interface states were comparable for the two gate types. The n-type samples had low leakage and a flatband voltage of a few volts, while the p-type samples had high leakage and a fiatband voltage of around -20 V. The structure showed poor characteristics after a 700°C anneal for one hour, which is probably caused by the formation of titanium silicide. The TiN films had a lower content of nitrogen than expected, which could influence the stability.
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