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- Bertolotto, L, et al.
(author)
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phi phi associated production in (p)over-bar-p annihilation from JETSET
- 1996
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In: PHYSICS OF ATOMIC NUCLEI. - : AMER INST PHYSICS. ; , s. 1444-1449
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Conference paper (peer-reviewed)abstract
- The JETSET (PS202) experiment at CERN has studied the reaction (p) over bar p --> 4K(+/-) in the invariant-mass range from 2.15 to 2.43 GeV/c(2). The phi phi, phi K+K-, and 4K(+/-) cross sections have been measured, and a spin-parity analysis of the phi p
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- Doyle, J. P., et al.
(author)
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Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation
- 1996
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In: III-nitride, SiC and diamond materials for electronic devices. ; , s. 519-524
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Conference paper (peer-reviewed)abstract
- Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by VPE with doping concentrations, the epitaxial layer having a doping concentration in the range of 10 exp 14/cu cm to 10 exp 17/cu cm. Numerous levels have been found in the as-grown n-type 6H-SiC samples, and SIMS and MeV electron irradiation have been employed to correlate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.
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