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- Hays, G. C., et al.
(författare)
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The diving behaviour of green turtles undertaking oceanic migration to and from Ascension Island: dive durations, dive profiles and depth distribution
- 2001
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Ingår i: Journal of Experimental Biology. - 1477-9145. ; 204:23, s. 4093-4098
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Tidskriftsartikel (refereegranskat)abstract
- Satellite telemetry was used to record the submergence duration of green turtles (Chelonia mydas) as they migrated from Ascension Island to Brazil (N=12 individuals) while time/depth recorders (TDRs) were used to examine the depth distribution and dive profiles of individuals returning to Ascension Island to nest after experimental displacement (N=5 individuals). Satellite telemetry revealed that most submergences were short (<5 min) but that some submergences were longer (>20 min), particularly at night. TDRs revealed that much of the time was spent conducting short (24 min), shallow (approximately 0.91.5 m) dives, consistent with predictions for optimisation of near-surface travelling, while long (typically 2030 min), deep (typically 1020 m) dives had a distinctive profile found in other marine reptiles. These results suggest that green turtles crossing the Atlantic do not behave invariantly, but instead alternate between periods of travelling just beneath the surface and diving deeper. These deep dives may have evolved to reduce silhouetting against the surface, which would make turtles more susceptible to visual predators such as large sharks.
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| 2. |
- Cho, H., et al.
(författare)
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Ultradeep, low-damage dry etching of SiC
- 2000
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:6, s. 739-741
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.
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