1. |
|
|
2. |
- Adell, M., et al.
(author)
-
Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
- 2006
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:17
-
Journal article (peer-reviewed)abstract
- Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
|
|
3. |
- Glover, C. J., et al.
(author)
-
Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
- 2009
-
In: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
-
Journal article (peer-reviewed)abstract
- Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
|
|
4. |
|
|
5. |
|
|
6. |
|
|
7. |
|
|
8. |
- Stanciu, V., et al.
(author)
-
Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
- 2005
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 72:12
-
Journal article (peer-reviewed)abstract
- The influence of annealing parameters—temperature (Ta) and time (ta)—on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films has been investigated. The dependence of the transition temperature (TC) on ta marks out two regions. The TC peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second ("saturated") region the effect of ta is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield TC-values of ~150 K and above, regardless of the thickness of the epilayers
|
|
9. |
|
|
10. |
|
|