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- Angelov, Iltcho, 1943, et al.
(author)
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F-band resistive mixer based on heterostructure field effect transistor technology
- 1993
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In: Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. - 0149-645X. - 0780312090 ; 2, s. 787-790
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Conference paper (peer-reviewed)abstract
- A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.
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