| 1. |
- Hemmingsson, Carl, 1964-, et al.
(author)
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Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
- 1997
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 81:9, s. 6155-6159
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Journal article (peer-reviewed)abstract
- Deep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p+n junctions in the temperature range 100–750 K revealed several electron traps and one hole trap with thermal ionization energies ranging from 0.35 to 1.65 eV. Most of these defects were already observed at a dose of irradiation as low as ≈5×1013 cm-2. Dose dependence and annealing behavior of the defects were investigated. For two of these electron traps, the electron capture cross section was measured. From the temperature dependence studies, the capture cross section of these two defects are shown to be temperature independent. © 1997 American Institute of Physics.
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| 2. |
- Kordina, Olle, et al.
(author)
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Growth of SiC by "Hot-Wall" CVD and HTCVD
- 1997
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In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 202:1, s. 321-334
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Journal article (peer-reviewed)abstract
- A reactor concept for the growth of high-quality epitaxial SiC films has been investigated. The reactor concept is based on a hot-wall type susceptor which, due to the unique design, is very power efficient. Four different susceptors are discussed in terms of quality and uniformity of the grown material. The films are grown using the silane–propane–hydrogen system on off-axis (0001) 6H- and 4H-SiC substrates. Layers with doping levels in the low 1014 cm—3 showing strong free exciton emission in the photoluminescence spectra may readily be grown reproducibly in this system. The quality of the grown layers is also confirmed by the room temperature minority carrier lifetimes in the microsecond range and the optically detected cyclotron resonance data which give mobilities in excess of 100000 cm2/Vs at 6 K. Finally, a brief description will be given of the HTCVD technique which shows promising results in terms of high quality material grown at high growth rates.
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| 3. |
- Tobias, Peter, et al.
(author)
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Fast chemical sensing with metal-insulator silicon carbide structures
- 1997
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 18:6, s. 287-289
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Journal article (peer-reviewed)abstract
- It is demonstrated that the current-voltage characteristics of platinum-thin insulator silicon carbide diodes react rapidly to changes of the concentration of oxygen and hydrocarbons in the ambient already at temperatures around 500 degrees C-600 degrees C, In this letter, we use moving gas outlets to, for the first time, estimate time constants of the response in the order of a few milliseconds. The short time constants of these sensors make them suitable for applications in combustion monitoring. The new method to modulate gas concentrations rapidly at surfaces has the potential to be a valuable tool for evaluation of device structures for fast chemical sensing.
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