| 1. |
- Jogi, Indrek, et al.
(author)
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Atomic layer deposition of high capacitance density Ta2O5-ZrO2 based dielectrics for metal-insulator-metal structures
- 2010
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 87:2, s. 144-149
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Journal article (peer-reviewed)abstract
- We have investigated electrical properties of laminated atomic layer deposited films: ZrO2-Ta2O5, ZrO2-Nb2O5-Ta2O5, ZrO2-TaxNb1-xO5 and Ta2O5-ZrxNbyOz. Even though the capacitances of laminates were often higher compared to films of constituent materials with similar thickness, considerably higher charge storage factors, Q were achieved only when tetragonal ZrO2 was stabilized in ZrO2-Ta2O5 laminate and when the laminate thickness exceeded 50 rim. The decreased Q values in the case of most laminates were the result of increased leakage currents. In the case of thinner films only Ta2O5-ZrxNbyOz, stack possessed capacitance density and Q value higher than reference HfO2. Concerning the conduction mechanisms, in the case of thinner films, the Ta2O5 or TaxNb1-xO5 apparently controlled the leakage either by Richardson-Schottky emission or Poole-Frenkel effect. (C) 2009 Elsevier B.V. All rights reserved
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| 2. |
- Jogi, Indrek, et al.
(author)
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Investigation of ZrO2-Gd2O3 Based High-k Materials as Capacitor Dielectrics
- 2010
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In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 157:10, s. G202-G210
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Journal article (peer-reviewed)abstract
- Atomic layer deposition (ALD) of ZrO2-Gd2O3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd2O3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd2O3 content above 3.4 cat. % resulted in the decreased permittivity of the mixtures. Leakage currents generally decreased with increasing Gd content, whereby laminated structures demonstrated smaller leakage currents than mixed films at a comparable Gd content. Concerning the bottom electrode materials, the best results in terms of permittivity and leakage currents were achieved with Ru, allowing a capacitance equivalent oxide thickness of similar to 1 nm and a current density of 3 X 10(-8) A/cm(2) at 1 V. Charge storage values up to 60 nC/mm(2) were obtained for mixtures and laminates with thickness below 30 nm. In general, at electric fields below 2-3 MV/cm, normal and trap-compensated Poole-Frenkel conduction mechanisms were competing, whereas at higher fields, Fowler-Nordheim and/or trap-assisted tunneling started to dominate.
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| 3. |
- Kukli, Kaupo, et al.
(author)
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Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
- 2012
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 520:7, s. 2756-2763
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Journal article (peer-reviewed)abstract
- Ru thin films were grown on hydrogen terminated Si, SiO2, Al2O3, HfO2, and TiO2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4-20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250-255 degrees C, the growth of the Ru films was favored on silicon, compared to the growth on Al2O3, TiO2 and HfO2. At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO2, compared to the process on silicon. At 320-325 degrees C, no growth occurred on Si-H and SiO2-covered silicon. Resistivity values down to 18 mu Omega.cm were obtained for ca. 10 nm thick Ru films.
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| 4. |
- Kukli, Kaupo, et al.
(author)
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Atomic Layer Deposition of Ruthenium Films on Strontium Titanate
- 2011
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In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 11:9, s. 8378-8382
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Journal article (peer-reviewed)abstract
- Atomic layer deposition of ruthenium on SrTiO(3) layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO(2) films and SiO(2)/Si surfaces. Deposition temperature was 325 degrees C. Using rather short but intense air pulses, smooth and uniform Ru films were deposited on SrTiO(3). The films were crystallized at early stages of the growth. The nucleation density and rate on SrTiO(3) were notably lower compared to that on ZrO(2) and SiO(2), but the physical qualities including the film conductivity were considerably enhanced after reaching Ru film thickness around 10 nm.
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| 5. |
- Kukli, Kaupo, et al.
(author)
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Holmium and titanium oxide nanolaminates by atomic layer deposition
- 2014
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In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 565, s. 165-171
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Journal article (peer-reviewed)abstract
- Nanolaminate (nanomultilayer) thin films of TiO2 and Ho2O3 were grown on Si(001) substrates by atomic layer deposition at 300 degrees C from alkoxide and beta-diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO2 and 4.5 nm for Ho2O3. As-deposited films were smooth and X-ray amorphous. After annealing at 800 degrees C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho2Ti2O7. The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.
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| 6. |
- Kukli, Kaupo, et al.
(author)
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Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1 '-methyl-ruthenocene
- 2010
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 312:12-13, s. 2025-2032
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Journal article (peer-reviewed)abstract
- Ru thin films were grown on TiO2, Al2O3, HfO2, and ZrO2 films as well as on HF-etched silicon and SiO2-covered silicon by atomic layer deposition from 1-ethyl-1'-methyl-ruthenocene, (CH3C5H4) (C2H5C5H4)Ru, and oxygen. The growth of Ru was obtained and characterized at temperatures ranging from 250 to 325 degrees C. On epitaxial rutile, highly oriented growth of Ru with hexagonal structure was achieved, while on other substrates the films possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films. The lowest resistivity value obtained for 5.0-6.6 nm thick films was 26 mu Omega cm. The conductivity of the films depended somewhat on the deposition cycle time parameters and, expectedly, more strongly on the amount of deposition cycles. Increase in the deposition temperature of underlying metal oxide films increased the conductivity of Ru layers.
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| 7. |
- Pore, Viljami, et al.
(author)
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Atomic layer deposition of ferromagnetic cobalt doped titanium oxide thin films
- 2011
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In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND. - 0040-6090. ; 519:10, s. 3318-3324
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Journal article (peer-reviewed)abstract
- TiO2 thin films doped or mixed with cobalt oxide were grown by atomic layer deposition using titanium tetramethoxide and cobalt(III)acetylacetonate as metal precursors. The films could be deposited using both 03 and H2O as oxygen precursors. The films grown using water exhibited considerably smoother surface than those grown with ozone. The TiO2:Co films with Co/(Co + Ti) cation ratio ranging from 0.01 to 0.30 were crystallized by annealing at 650 C, possessing mixed phase composition comprising rutile and anatase and, additionally, CoTiO3 or CoTi2O5. The annealed films demonstrated magnetic response expressed by magnetization curves with certain hysteresis and coercive fields.
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| 8. |
- Tamm, Aile, et al.
(author)
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Atomic layer deposition of high-k dielectrics on carbon nanoparticles
- 2013
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In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 538, s. 16-20
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Journal article (peer-reviewed)abstract
- Carbon nanoparticles were synthesized from 5-methylresorcinol and formaldehyde via base catalysed polycondensation reaction and distributed over silicon oxide wafers and aluminium oxide thin films. These particles essentially possessed monocrystalline graphite structure. The particles were covered by hafnium oxide thin films in metal chloride based atomic layer deposition process carried out at 300 degrees C. Upon deposition of HfO2, thin crystalline metal oxide layer containing mostly cubic phase was formed. At the same time, deposition of the metal oxide caused reduction of the sizes of graphite particles and essential increase in the disorder in carbon.
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| 9. |
- Tamm, Aile, et al.
(author)
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Atomic layer deposition of ZrO2 for graphene-based multilayer structures: In situ and ex situ characterization of growth process
- 2014
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In: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 211:2, s. 397-402
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Journal article (peer-reviewed)abstract
- Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100-nm thick nickel film or on Cu-foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 degrees C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained.
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