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Search: WFRF:(Latham T.) > (1995-1999)

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  • Wagner, J, et al. (author)
  • Di-Carbon defects in annealed highly carbon doped GaAs
  • 1997
  • In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 78:1, s. 74-77
  • Journal article (peer-reviewed)abstract
    • Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex.
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