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  • Ferreira da Silva, Antonio, et al. (author)
  • Magnetoresistance of doped silicon
  • 2015
  • In: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 91:21, s. 214414-
  • Journal article (peer-reviewed)abstract
    • We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.
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