| 1. |
- Hållstedt, Julius, et al.
(author)
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Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates
- 2007
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In: ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 2008. - 9781424411238 ; , s. 319-322
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Conference paper (peer-reviewed)abstract
- We present a comprehensive study of biaxially strained (up to similar to 3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage for the relaxed SiGe substrates compared to conventional implantation. The source to drain leakage in 80 nm devices was effectively reduced by increment of channel doping and rotation of the channel direction.
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| 2. |
- O'Neill, A.G., et al.
(author)
-
Strained silicon technology
- 2007
-
In: ICSICT-2006. - 1424401615 - 9781424401611 ; , s. 104-107
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Conference paper (peer-reviewed)abstract
- Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated.
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| 3. |
- von Haartman, M., et al.
(author)
-
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
- 2007
-
In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 51:5, s. 771-777
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Journal article (peer-reviewed)abstract
- Mobility and low-frequency (LF) noise were studied in tensile strained Si n- and pMOSFETs fabricated on relaxed SiGe virtual substrates. Both the impact of the channel orientation ((110) or (100) on (100) Si) and the tensile strain were carefully investigated. Two types of virtual substrates were used; a thin relaxed SiGe layer (20% Ge) and a thick one (27% Ge). The strained Si nMOSFETs fabricated on the thin substrate showed similar LF noise level as in the reference devices, whereas the thick substrate caused severely increased LF noise in the nMOSFETs. The latter was linked to the higher Ge concentration and explained by possible misfit dislocations and increased defect densities, likely resulting from strain relaxation caused by ion implantation damage. On the other hand, considerably lower LF noise was achieved in the pMOSFETs on the thick SiGe. The channel orientation was not found to have a significant influence on the LF noise performance in any of the studied devices.
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