SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(MIRO J) srt2:(1995-1999)"

Sökning: WFRF:(MIRO J) > (1995-1999)

  • Resultat 1-5 av 5
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  •  
2.
  •  
3.
  • Rasmussen, F. Berg, et al. (författare)
  • The nitrogen-pair oxygen defect in silicon
  • 1996
  • Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5107 .- 1873-4944. ; 36:1-3, s. 91-95
  • Tidskriftsartikel (refereegranskat)abstract
    • The nitrogen-pair oxygen defect in silicon has been studied by infrared absorption spectroscopy on samples implanted with various combinations of 14N, 15N, 16O and 17O. The measurements give direct evidence for the involvement of nitrogen and oxygen in the defect and show that the impurity atoms comprising the defect are only weakly coupled. Ab initio cluster calculation on several models of the nitrogen-pair oxygen defect have been performed and are compared with experiment. Based on these investigations a model consisting of a bridging oxygen atom adjacent to the nitrogen pair is suggested
  •  
4.
  • Rasmussen, F. Berg, et al. (författare)
  • The NNO defect in silicon
  • 1995
  • Ingår i: Proceedings of the 18th International Conference on Defects in Semiconductors. - : Trans Tech Publications Inc.. ; , s. 791-796
  • Konferensbidrag (refereegranskat)abstract
    • Nitrogen-oxygen complexes in silicon have been studied by infrared absorption spectroscopy on samples implanted with various combinations of O and N isotopes as well as O-rich samples doped with N during growth. Local vibrational modes at 805, 999 and 1030 cm-1 (14N, 16O) are directly shown to belong to a defect consisting of a N-pair interacting with an O interstitial. A recently proposed model of this NNO defect is further investigated by ab initio cluster calculations and found to account for the dynamical properties of the defect. A mode around 730 cm-1 predicted by the calculation is observed giving further support to the model.
  •  
5.
  • Ewels, C P, et al. (författare)
  • Shallow thermal donor defects in silicon
  • 1996
  • Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 77:5, s. 865-868
  • Tidskriftsartikel (refereegranskat)abstract
    • An ab initio local density functional cluster program, aimpro, is used to examine nitrogen related shallow thermal donor defects in silicon. We find the bonding of oxygen with interstitial nitrogen in Ni- O2i to be almost "normal," but the O atoms move slightly out of their bond centered sites causing the deep donor level of Ni to become shallow. The defect has properties consistent with those experimentally observed for shallow thermal donors. We also find that a CiH- O2i defect has very similar electronic properties, and suggest that shallow thermal donors do not have a unique composition.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-5 av 5

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy