1. |
- Evensen, L, et al.
(author)
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Thin detectors for the CHICSi Delta E-E telescope
- 1997
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In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9499. ; 44:3, s. 629-634
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Journal article (peer-reviewed)abstract
- A pilot series of 10 mu m to 15 mu m thin silicon detectors has been made for the Delta E-E telescopes in the CHICSi detector system. This system will operate gt the CELSIUS heavy ion storage ring in Uppsala, Sweden, Delta E-E telescopes provide isotope i
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2. |
- Ghetti, R, et al.
(author)
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Characterization of nuclear sources via two-neutron intensity interferometry
- 1999
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In: NUCLEAR PHYSICS A. - : ELSEVIER SCIENCE BV. - 0375-9474. ; 660:1, s. 20-40
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Journal article (peer-reviewed)abstract
- The neutron energy spectrum and the two-neutron correlation function have been measured for the E/A = 45 MeV Ni + Al reaction in order to assess the space-time characteristics of the neutron emitting source. When comparing the data to a statistical model,
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3. |
- Öberg, Sven, et al.
(author)
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First stage of oxygen aggregation in silicon : the oxygen dimer
- 1998
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In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 81:14, s. 2930-2933
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Journal article (peer-reviewed)abstract
- The structure and dynamic properties of the interstitial oxygen dimer in silicon are found using a combination of infrared spectroscopy and ab initio modeling. We find that the stable dimer consists of a pair of inequivalent weakly coupled interstitial oxygen atoms separated by a Si-Si bond. Two high frequency modes are decoupled in one 16O-18O combination but are strongly mixed in the other combination. A third lower lying mode involves the compression of the Si-Si bond joining the oxygen atoms and gives distinct modes in the mixed 16O-18O case.
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6. |
- Markevich, V.P., et al.
(author)
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Local vibrational mode bands of V-O-H complexes in silicon
- 1999
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In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 273-274, s. 300-304
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Journal article (peer-reviewed)abstract
- H2 molecules, which are introduced into moderately doped silicon crystals by high-temperature in-diffusion from H2 gas ambient followed by fast cooling to room temperature, are found to interact effectively with the defects induced by irradiation of the crystals with fast electrons. In Czochralski-grown silicon crystals, the interaction of the mobile H2 molecules with vacancy-oxygen defects (A centers) leads to the creation of V-O-H2 complexes. This complex gives rise to infrared (IR) absorption lines at 943.5, 2126.4, and 2151.5 cm-1. Ab initio calculations showed that the most stable configuration of V-O-H2 consists of one oxygen and two hydrogen atoms sharing a vacancy site. It is suggested that the interaction of the V-O-H2 complexes with interstitial oxygen atoms results in the formation of V-O2-H2 complexes, which are responsible for the IR absorption line at 891.5 cm-1.
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