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- Imanishi, T., et al.
(author)
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Integrative annotation of 21,037 human genes validated by full-length cDNA clones
- 2004
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In: PLoS biology. - : Public Library of Science (PLoS). - 1544-9173 .- 1545-7885. ; 2:6, s. 856-875
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Journal article (peer-reviewed)abstract
- The human genome sequence defines our inherent biological potential; the realization of the biology encoded therein requires knowledge of the function of each gene. Currently, our knowledge in this area is still limited. Several lines of investigation have been used to elucidate the structure and function of the genes in the human genome. Even so, gene prediction remains a difficult task, as the varieties of transcripts of a gene may vary to a great extent. We thus performed an exhaustive integrative characterization of 41,118 full-length cDNAs that capture the gene transcripts as complete functional cassettes, providing an unequivocal report of structural and functional diversity at the gene level. Our international collaboration has validated 21,037 human gene candidates by analysis of high-quality full-length cDNA clones through curation using unified criteria. This led to the identification of 5,155 new gene candidates. It also manifested the most reliable way to control the quality of the cDNA clones. We have developed a human gene database, called the H-Invitational Database (H-InvDB; http://www.h-invitational.jp/). It provides the following: integrative annotation of human genes, description of gene structures, details of novel alternative splicing isoforms, non-protein-coding RNAs, functional domains, subcellular localizations, metabolic pathways, predictions of protein three-dimensional structure, mapping of known single nucleotide polymorphisms (SNPs), identification of polymorphic microsatellite repeats within human genes, and comparative results with mouse full-length cDNAs. The H-InvDB analysis has shown that up to 4% of the human genome sequence (National Center for Biotechnology Information build 34 assembly) may contain misassembled or missing regions. We found that 6.5% of the human gene candidates (1,377 loci) did not have a good protein-coding open reading frame, of which 296 loci are strong candidates for non-protein-coding RNA genes. In addition, among 72,027 uniquely mapped SNPs and insertions/deletions localized within human genes, 13,215 nonsynonymous SNPs, 315 nonsense SNPs, and 452 indels occurred in coding regions. Together with 25 polymorphic microsatellite repeats present in coding regions, they may alter protein structure, causing phenotypic effects or resulting in disease. The H-InvDB platform represents a substantial contribution to resources needed for the exploration of human biology and pathology.
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3. |
- Wang, Z., et al.
(author)
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Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures
- 2002
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In: Philosophical Magazine B. - : Informa UK Limited. - 1364-2812 .- 1463-6417. ; 82:8, s. 891-903
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Journal article (peer-reviewed)abstract
- SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3 µm cm-2. However, the films deposited at 200°C showed the lowest density of bulk trapped charges (150nC cm-2) and interface states ((1.2-6.1) × 1011 cm-2 eV-1), and are therefore considered to be the most suitable for device applications.
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4. |
- Wang, Z., et al.
(author)
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Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature
- 2001
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:10, s. 1513-1515
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Journal article (peer-reviewed)abstract
- Deposition of SrTiO3 (STO) thin films by radio-frequency magnetron sputtering in an ultrahigh vacuum system at a low substrate temperature (~200°C) was performed in order to produce high-quality STO/p-Si (100) interfaces and STO insulator layers with dielectric constants of high magnitude. The STO films were identified as polycrystalline by x-ray diffraction, and were approximated with a layered structure according to the best fitting results of raw data from both Rutherford backscattering spectroscopy and variable angle spectroscopic ellipsometry. Room-temperature current-voltage and capacitance-voltage (C-V) measurements on Al/STO/p-Si diodes clearly revealed metal-insulator-semiconductor behavior, and the STO/p-Si interface state densities were of the order of 1011 eV-1 cm-2. The dielectric constant of the STO film was 65, and the dielectric loss factor varied between 0.05 and 0.55 for a frequency range of 1 kHz-10 MHz. For a 387 nm thick STO film, the dielectric breakdown field was 0.31 MV cm-1, and the charge storage capacity was 2.1 µC cm-2. These results indicate that STO films are suitable for applications as insulator layers in dynamic random access memories or as cladding layers in electroluminescent devices. © 2001 American Institute of Physics.
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