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- OLSSON, LO, et al.
(author)
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ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
- 1995
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:3, s. 1470-1473
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Journal article (peer-reviewed)abstract
- The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
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- OLSSON, LO, et al.
(author)
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SURFACE ELECTRONIC-STRUCTURE OF INSB(100)4X1 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY
- 1995
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In: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 331, s. 1176-1180
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Journal article (peer-reviewed)abstract
- The surface electronic structure of the In-rich InSb(100)4 X 1 surface has been studied by angle-resolved photoelectron spectroscopy. To determine the origin of different contributions in spectra, direct bulk interband transitions were first identified using a semi-empirical band structure calculation and assuming direct transitions into free electron-like final bands. Three surface-induced features were identified and their dispersions have been mapped along symmetry directions of the surface Brillouin zone.
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