| 1. |
- Beyer, Franziska, et al.
(author)
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Metastable defects in low-energy electron irradiated n-type 4H-SiC
- 2010
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In: Materials Science Forum, Vols. 645-648. - : Trans Tech Publications. ; , s. 435-438
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Conference paper (peer-reviewed)abstract
- After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the defects Z(1/2) and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, and EF3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (less than220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.
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| 2. |
- Beyer, Franziska, et al.
(author)
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Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
- 2011
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In: <em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>. - : Trans Tech Publications Inc.. ; , s. 249-252
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Conference paper (peer-reviewed)abstract
- DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.
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| 3. |
- Duc, Tran Thien, et al.
(author)
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Capture cross section of electron-irradiation-induced defects in bulk GaN grown by halide vapor phase epitaxy
- 2014
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Other publication (other academic/artistic)abstract
- Electron-irradiation-induced defects in GaN grown by halide vapor phase epitaxy is studied by deep level transient spectroscopy in which the capture cross section and its temperature dependence of the deep levels was determined by the filling pulse method. Before irradiation, one trap level, labelled ET4 (EC – 0.244 eV), was observed. After performing electron irradiation with an energy of 2 MeV at a fluence of 5 × 1016 cm-2, four deep trap levels, labelled ET1 (EC – 0.178 eV), ET2 (EC – 0.181 eV), ET3 (EC – 0.256 eV) and ET5 appeared. After annealing at 650K for 2 hours, only two irradiation induced deep levels, ET1 and ET3, were observed. By varying the rate windows, the temperature dependence of the capture cross section of the two deep levels ET1 and ET2 and ET3 was studied. The temperature behavior of ET2 and ET3 capture cross section is independent on temperature whereas the capture cross section of the deep level ET1 depends strongly on the temperature. It is suggested that electron capturing is govern by a multiphonon process to the level ET1.
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| 4. |
- Duc, Tran Thien, et al.
(author)
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Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy
- 2014
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 105:10, s. 102103-
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Journal article (peer-reviewed)abstract
- Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E-C-0.24 eV), D3 (E-C-0.60 eV), D4 (E-C-0.69 eV), D5 (E-C-0.96 eV), D7 (E-C-1.19 eV), and D8, were observed. After 2MeV electron irradiation at a fluence of 1 x 10(14) cm(-2), three deep electron traps, labeled D1 (E-C-0.12 eV), D5I (E-C-0.89 eV), and D6 (E-C-1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.
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| 5. |
- Kitade, Yujiro, et al.
(author)
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Antarctic Bottom Water production from the Vincennes Bay Polynya, East Antarctica
- 2014
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In: Geophysical Research Letters. - 0094-8276 .- 1944-8007. ; 41:10, s. 3528-3534
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Journal article (peer-reviewed)abstract
- One year moorings at depths greater than 3000m on the continental slope off Vincennes Bay, East Antarctica, reveal the cold (<-0.5 degrees C) and fresh (<34.64) signals of newly formed Antarctic Bottom Water (AABW). The signal appeared in June, 3 months after the onset of active sea-ice production in the nearby Vincennes Bay Polynya (VBP). The AABW signal continued for about 5 months at two moorings, with 1 month delay at the western site further downstream. Ship-based hydrographic data are in agreement, detecting the westward spread of new AABW over the continental slope from VBP. On the continental shelf, Dense Shelf Water (DSW) formation is observed by instrumented seals, in and around the VBP during autumn, and we estimate its transport to be 0.16 +/- 0.07 (x 106m3s-1). We conclude that the DSW formed in this region, albeit from a modest amount of sea-ice production, nonetheless contributes to the upper layer of AABW in Australian-Antarctic Basin.
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| 6. |
- Ohshima, Kay I., et al.
(author)
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Antarctic BottomWater production by intense sea-ice formation in the Cape Darnley polynya
- 2013
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In: Nature Geoscience. - 1752-0894 .- 1752-0908. ; 6:3, s. 235-240
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Journal article (peer-reviewed)abstract
- The formation of Antarctic Bottom Water-the cold, dense water that occupies the abyssal layer of the global ocean-is a key process in global ocean circulation. This water mass is formed as dense shelf water sinks to depth. Three regions around Antarctica where this process takes place have been previously documented. The presence of another source has been identified in hydrographic and tracer data, although the site of formation is not well constrained. Here we document the formation of dense shelf water in the Cape Darnley polynya (65 degrees -69 degrees E) and its subsequent transformation into bottom water using data from moorings and instrumented elephant seals (Mirounga leonina). Unlike the previously identified sources of Antarctic Bottom Water, which require the presence of an ice shelf or a large storage volume, bottom water production at the Cape Darnley polynya is driven primarily by the flux of salt released by sea-ice formation. We estimate that about 0.3-0.7 x 10(6) m(3) s(-1) of dense shelf water produced by the Cape Darnley polynya is transformed into Antarctic BottomWater. The transformation of this water mass, which we term Cape Darnley BottomWater, accounts for 6-13% of the circumpolar total.
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