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Träfflista för sökning "WFRF:(Olsson Jörgen) srt2:(1995-1999)"

Search: WFRF:(Olsson Jörgen) > (1995-1999)

Result 1-10 of 44

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1.	Bengtsson, L, et al. (author) An empirical high frequency large signal model for high voltage LDMOS transistors 1998 In: Proceedings of the IEEE European Microwave Conference, Vol.1. ; , s. 733-738 Conference paper (peer-reviewed)
2.	Bengtsson, Lars, et al. (author) An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies 1999 In: IEEE ICMTS, Gothenburg, Sweden. Conference paper (other academic/artistic)
3.	Bengtsson, S, et al. (author) BESOI materials with diamond or aluminium as buried insulator 1997 In: DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK. Conference paper (peer-reviewed)
4.	Bengtsson, S, et al. (author) Integration of diamond and silicon for electronic materials 1998 In: the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec. Conference paper (peer-reviewed)
5.	Bengtsson, Stefan, et al. (author) Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials 1999 In: MRS conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. Conference paper (peer-reviewed)
6.	Bengtsson, Stefan, 1961, et al. (author) Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials 1999 In: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133- Conference paper (peer-reviewed)abstract Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
7.	Carlsson, Jörgen, et al. (author) Boron neutron capture therapy against tumor cells with overexpression of the EGF-receptor 1996 In: Cancer Neutron Capture Therapy. - New York : Plenum Press. - 030645307X - 9780306453076 ; , s. 49-56 Book chapter (other academic/artistic)
8.	Edholm, Bengt, et al. (author) Electrical investigation of the silicon/diamond interface 1997 In: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 36:1-4, s. 245-248 Journal article (peer-reviewed)abstract A new method for measuring the interface properties, using diamond terminated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon/diamond interface for two types of diamond. It was found
9.	Edholm, Bengt, et al. (author) Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material 1995 In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 34:9A, s. 4706-4714 Journal article (peer-reviewed)abstract Thermal properties of devices fabricated on different silicon-on-diamond (SOD) and silicon-on-insulator (SOI) structures have been investigated. A new method for transient measurements of temperature distributions in the S OI/S OD materials has been devel
10.	Forsberg, Markus, et al. (author) Colloidal Silica as a Final Polishing Slurry 1997 In: CMP´97. 4-5. ; , s. 244-245 Conference paper (peer-reviewed)

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Result 1-10 of 44

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Type of publication: conference paper (20); journal article (13); editorial collection (6); book (1); other publication (1); doctoral thesis (1); show more...; book chapter (1); patent (1); show less...

Type of content: peer-reviewed (32); other academic/artistic (11); pop. science, debate, etc. (1)

Author/Editor: Olsson, Jörgen (26); Nilsson, Per (7); Vestling, Lars (7); Olsson, Ulf (7); Eklund, Klas-Håkan (4); Olsson, Jörgen, 1966 ... (3); show more...; Carlsson, Jörgen (3); Lundqvist, Hans (2); Hallen, A (2); Olsson, Pär (2); Forsberg, Markus (2); Gedda, Lars (2); Teneberg, Susann, 19 ... (2); Sjöberg, Stefan (2); Bengtsson, L (2); Norde, Herman (2); Tilly, Nina (2); Berg, Sören (2); Ericsson, P. (2); Bergh, M. (2); Ångström, Jonas, 195 ... (2); Bengtsson, Lars (1); Glimelius, Bengt (1); Olcén, P. (1); Johansson, E (1); Pettersson, Jean (1); Tolmachev, Vladimir (1); Orlova, Anna (1); Stenerlöw, Bo (1); Olsson, P. (1); Pontén, J. (1); Fredlund, H (1); Essand, Magnus (1); Koziorowski, Jacek (1); Ericsson, Per, 1968 (1); Bengtsson, Stefan, 1 ... (1); Westermark, Bengt (1); Jonsson, Magnus, 196 ... (1); Katardjiev, Ilia (1); Jonsson, Lars (1); Sundin, Anders (1); Olsson, Bertil (1); Larsson, Jörgen (1); Linder, H (1); Bergh, Mats, 1968 (1); Hartman, T (1); Lovqvist, A. (1); Hakansson, P (1); Sjöberg, S (1); Blom, Hans-Olof (1); show less...

University: Uppsala University (36); University of Gothenburg (3); Lund University (2); Halmstad University (1); Chalmers University of Technology (1); Karolinska Institutet (1); show more...; Blekinge Institute of Technology (1); show less...

Language: English (41); Swedish (3)

Research subject (UKÄ/SCB): Engineering and Technology (27); Medical and Health Sciences (5); Natural sciences (1)

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