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Träfflista för sökning "WFRF:(Olsson Jörgen) srt2:(2005-2009)"

Search: WFRF:(Olsson Jörgen) > (2005-2009)

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1.	Sjöblom, Gustaf, et al. (author) Investigation of the Thermal Stability of Reactively Sputter Deposited TiN MOS Gate Electrodes 2005 In: IEEE Transactions on Electron Devices. - 0018-9383. ; 52:10, s. 2349-2352 Journal article (peer-reviewed)
2.	Westlinder, Jörgen, et al. (author) Investigation of Ta2O5 thin film MIM capacitors in the RF regime 2005 In: Proceedings of GHz2005 Symposium. ; , s. 311-314 Conference paper (other academic/artistic)
3.	Westlinder, Jörgen, et al. (author) Low-resistivity ZrNx metal gate in MOS devices 2005 In: Solid-State Electronics. - 0038-1101. ; 49:8, s. 1410-1413 Journal article (peer-reviewed)
4.	Abermann, Stephan, et al. (author) Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology 2006 In: Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS). Conference paper (peer-reviewed)
5.	Abermann, S., et al. (author) Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics 2007 In: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 536-539 Journal article (peer-reviewed)abstract In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TIN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 degrees C or 950 degrees C show thermodynamic instability and related undesirable high leakage currents.
6.	Abermann, S, et al. (author) Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics 2006 Conference paper (peer-reviewed)
7.	Abermann, S., et al. (author) Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric 2007 In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638 Journal article (peer-reviewed)abstract We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.
8.	Abermann, S., et al. (author) Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric 2006 In: Presented at Int. Conf. on Micro- and Nano-Engineering. Conference paper (other academic/artistic)
9.	Anderås, Emil, et al. (author) Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms 2009 In: Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1). ; , s. 80-83 Conference paper (peer-reviewed)
10.	Ankarcrona, Johan, et al. (author) Analysis of crosstalk in SOI substrates 2005 In: Proceedings of GHz2005 Symposium. ; , s. 131-134 Conference paper (peer-reviewed)

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Result 1-10 of 82

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Type of publication: conference paper (36); journal article (33); doctoral thesis (7); reports (1); book (1); other publication (1); show more...; research review (1); book chapter (1); licentiate thesis (1); show less...

Type of content: peer-reviewed (64); other academic/artistic (16); pop. science, debate, etc. (2)

Author/Editor: Olsson, Jörgen (45); Vestling, Lars (23); Olsson, Jörgen, 1966 ... (12); Vallin, Örjan (12); Bengtsson, Olof (11); Smith, Ulf (10); show more...; Martin, David (10); Sjöblom, Gustaf (9); Eklund, Klas-Håkan (9); Katardjiev, Ilia (7); Ankarcrona, Johan (7); Uller, Tobias, 1977 (6); Olsson, Mats, 1960 (5); Lu, Jun (4); Abermann, S. (4); Bertagnolli, E. (4); Warnhammar Finnborg, ... (3); Hultborn, Ragnar, 19 ... (3); Efavi, J. (3); Bäck, Tom, 1964 (3); Lindegren, Sture, 19 ... (3); Palm, Stig, 1964 (3); Andersson, Håkan, 19 ... (3); Elgqvist, Jörgen, 19 ... (3); Jacobsson, Lars, 194 ... (3); Yantchev, Ventsislav (3); Olsson, Marita, 1965 (3); Lu, J. (2); Svensson, Ingvar L (2); Hellström, Per-Erik (2); Östling, Mikael (2); Lemme, Max (2); Påhlman, Lars (2); Smedh, Kennet (2); Lindblom, Annika (2); Rutegård, Jörgen (2); Johansson, Bengt R, ... (2); Ericson, Lars (2); Jensen, Holger (2); Olsson, Louise (2); Hjältén, Joakim (2); Johansson, Therese (2); Jonsson, Bengt Gunna ... (2); Larsen, Mattias (2); Seifeddine, Salem (2); Lindforss, Ulrik (2); Wessen, Magnus (2); Olsson, Jörgen, Prof ... (2); Stenlund, T. (2); Qiu, Zhijun (2); show less...

University: Uppsala University (54); University of Gothenburg (11); University of Gävle (8); Umeå University (5); Royal Institute of Technology (4); Jönköping University (3); show more...; Chalmers University of Technology (3); Kristianstad University College (2); University of Skövde (2); Karolinska Institutet (2); Swedish University of Agricultural Sciences (2); Örebro University (1); Linköping University (1); Lund University (1); Mid Sweden University (1); Linnaeus University (1); show less...

Language: English (78); Swedish (4)

Research subject (UKÄ/SCB): Engineering and Technology (24); Natural sciences (12); Medical and Health Sciences (6); Agricultural Sciences (2); Social Sciences (1)

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