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Träfflista för sökning "WFRF:(Osten R.) srt2:(2008-2009)"

Search: WFRF:(Osten R.) > (2008-2009)

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1.
  • Czernohorsky, M., et al. (author)
  • Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing
  • 2008
  • In: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:3, s. 035010-
  • Journal article (peer-reviewed)abstract
    • We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.
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2.
  • Lemme, Max C., 1970-, et al. (author)
  • Complementary metal oxide semiconductor integration of epitaxial Gd(2)O(3)
  • 2009
  • In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 27:1, s. 258-261
  • Journal article (peer-reviewed)abstract
    • In this paper, epitaxial gadolinium oxide (Gd(2)O(3)) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd(2)O(3) gate dielectrics is explored by carefully controlling the annealing conditions.
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