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Search: WFRF:(Palisaitis J.) > (2010-2014)

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1.
  • Muhammad, Junaid, et al. (author)
  • Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
  • 2011
  • In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 110:12, s. 123519-
  • Journal article (peer-reviewed)abstract
    • We study the effect of high power pulses in reactive magnetron sputter epitaxy on the structural properties of GaN (0001) thin films grown directly on Al2O3 (0001) substrates. The epilayers are grown by sputtering from a liquid Ga target, using a high power impulse magnetron sputtering power supply in a mixed N2/Ar discharge. X-ray diffraction, micro-Raman, micro-photoluminescence, and transmission electron microscopy investigations show the formation of two distinct types of domains. One almost fully relaxed domain exhibits superior structural and optical properties as evidenced by rocking curves with a full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the full width at half maximum of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to the higher densities of the point and extended defects, resulting from the ion bombardment during growth. Voids form at the domain boundaries. Mechanisms for the formation of differently strained domains, along with voids during the epitaxial growth of GaN are discussed.
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2.
  • ul-Hassan, Jawad, et al. (author)
  • Growth and properties of SiC on-axis homoepitaxial layers
  • 2010
  • In: ICSCRM 2009. - : Trans Tech Publications. ; , s. 83-88
  • Conference paper (peer-reviewed)abstract
    • Homoepitaxial growth has been performed on 3 Si-face on-axis 4H-SiC substrates using standard gas system in a horizontal Hot-wall chemical vapor deposition system. Substrate surface damages are found to act as preferential nucleation sites for 3C inclusions also, the surface morphology after in-situ etching is found to largely influence the polytype stability in the epilayer. Different in-situ etching conditions were studied where Si-rich conditions are found to be better. Growth parameters and starting growth conditions are refined to obtain stable polytype in the epilayer. High quality homoepitaxial layers with 100% 4H-SiC are obtained on 3 substrates. Different optical and structural techniques are used to characterize the layers and to understand the growth mechanisms. The layers are found to be of high quality and no epitaxial defects typically found on off-axis epitaxial layers are observed. A high surface roughness is observed in these layers, however higher growth rate significantly lowers the surface roughness without affecting the polytype stability in the epilayer.
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