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- Hu, F.Z., et al.
(author)
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Mapping of an autosomal dominant gene for Dupuytren's contracture to chromosome 16q in a Swedish family
- 2005
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In: Clinical Genetics. - Oxford : Wiley. - 0009-9163 .- 1399-0004. ; 68:5, s. 424-429
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Journal article (peer-reviewed)abstract
- Dupuytren's contracture (DC) (OMIM 126900) is the most common connective tissue disease of mankind and has both heritable and sporadic forms. The inherited form is most frequently observed among the xanthochroi peoples of Northern Europe where its most common manifestations are thickening of the palmar fascia and contracture of the fingers. We ascertained a five-generation Swedish family in which DC is inherited in an autosomal dominant manner with high, but incomplete, penetrance by the end of the fifth decade. Blood was collected from all affected and informative unaffected family members for the performance of a genome-wide scan at a resolution of approximately 8 cM for all autosomes. Linkage was established to a single 6 cM region between markers D 16S419 and D 16S3032 on chromosome 16. A maximal two-point logarithm of odds (LOD) score of 3.18 was achieved at microsatellite marker D16S415 with four other markers in the region producing LODs of > 1.5. © Blackwell Munksgaard, 2005.
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| 4. |
- Högberg, Hans, 1968-, et al.
(author)
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Growth and characterization of MAX-phase thin films
- 2005
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In: Surface and Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 193, s. 6-10
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Journal article (peer-reviewed)abstract
- We report that magnetron sputtering can be applied to synthesize MAX-phase films of several systems including Ti–Si–C, Ti–Ge–C, Ti–Al–C, and Ti–Al–N. In particular, epitaxial films of the known phases Ti3SiC2, Ti3GeC2, Ti2GeC, Ti3AlC2, Ti2AlC, and Ti2AlN as well as the newly discovered thin film phases Ti4SiC3, Ti4GeC3 and intergrown structures can be deposited at 900–1000 °C on Al2O3(0001) and MgO(111) pre-seeded with TiC or Ti(Al)N. From XTEM and AFM we suggest a growth and nucleation model where MAX-phase nucleation is initiated at surface steps or facets on the seed layer and followed by lateral growth. Differences between the growth behavior of the systems with respect to phase distribution and phase stabilities are discussed. Characterization of mechanical properties for Tin+1Si–Cn films with nanoindentation show decreased hardness from about 25 to 15 GPa upon penetration of the basal planes with characteristic large plastic deformation with pile up dependent on the choice of MAX material. This is explained by cohesive delamination of the basal planes and kink band formation, in agreement with the observations made for bulk material. Measurements of the electrical resistivity for Ti–Si–C and Ti–Al–N films with four-point probe technique show values of 30 and 39 μΩ cm, respectively, comparable to bulk materials.
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| 5. |
- Magnuson, Martin, et al.
(author)
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Electronic structure and chemical bonding in Ti2AlC investigated by soft x-ray emission spectroscopy
- 2006
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:195108
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Journal article (peer-reviewed)abstract
- Theelectronic structure of the nanolaminated transition metal carbide Ti2AlC hasbeen investigated by bulk-sensitive soft x-ray emission spectroscopy. The measuredTi L, C K, and Al L emission spectra arecompared with calculated spectra using ab initio density-functional theory includingdipole matrix elements. The detailed investigation of the electronic structureand chemical bonding provides increased understanding of the physical propertiesof this type of nanolaminates. Three different types of bondregions are identified: The relatively weak Ti 3d–Al 3p bond1 eV below the Fermi level and the Ti 3d–C 2pand Ti 3d–C 2s bonds which are stronger and deeperin energy are observed around 2.5 and 10 eV below theFermi level, respectively. A strongly modified spectral shape of the3s final states in comparison to pure Al is detectedfor the intercalated Al monolayers indirectly reflecting the Ti 3d–Al3p hybridization. The differences between the electronic and crystal structuresof Ti2AlC, Ti3AlC2, and TiC are discussed in relation tothe number of Al layers per Ti layer in thetwo former systems and the corresponding change of the unusualmaterials properties.
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| 6. |
- Magnuson, Martin, et al.
(author)
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Electronic structure and chemical bonding in Ti4SiC3 investigated by soft x-ray emission spectroscopy and first-principles theory
- 2006
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:20
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Journal article (peer-reviewed)abstract
- Theelectronic structure in the new transition-metal carbide Ti4SiC3 has beeninvestigated by bulk-sensitive soft x-ray emission spectroscopy and compared tothe well-studied Ti3SiC2 and TiC systems. The measured high-resolution TiL, C K, and Si L x-ray emission spectra arediscussed with ab initio calculations based on density-functional theory includingcore-to-valence dipole matrix elements. The detailed investigations of the Ti-Cand Ti-Si chemical bonds provide increased understanding of the physicalproperties of these nanolaminates. A strongly modified spectral shape isdetected for the intercalated Si monolayers due to Si 3phybridization with the Ti 3d orbitals. As a result ofrelaxation of the crystal structure and the charge-transfer from Ti(and Si) to C, the strength of the Ti-C covalentbond is increased. The differences between the electronic and crystalstructures of Ti4SiC3 and Ti3SiC2 are discussed in relation tothe number of Si layers per Ti layer in thetwo systems and the corresponding change of materials properties.
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| 7. |
- Magnuson, Martin, et al.
(author)
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Electronic structure investigation of Ti3AlC2 , Ti3SiC2 , and Ti3GeC2 by soft x-ray emission spectroscopy
- 2005
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 72:24
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Journal article (peer-reviewed)abstract
- The electronic structures of epitaxially grown films of Ti3AlC2 , Ti3SiC2 , and Ti3GeC2 have been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured high-resolution Ti L , C K , Al L , Si L , and Ge M emission spectra are compared with ab initio density-functional theory including core-to-valence dipole matrix elements. A qualitative agreement between experiment and theory is obtained. A weak covalent Ti-Al bond is manifested by a pronounced shoulder in the Ti L emission of Ti3AlC2 . As Al is replaced with Si or Ge, the shoulder disappears. For the buried Al and Si layers, strongly hybridized spectral shapes are detected in Ti3AlC2 and Ti3SiC2 , respectively. As a result of relaxation of the crystal structure and the increased charge-transfer from Ti to C, the Ti-C bonding is strengthened. The differences between the electronic structures are discussed in relation to the bonding in the nanolaminates and the corresponding change of materials properties.
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| 9. |
- Palmquist, Anders, 1977, et al.
(author)
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Calcium Aluminate Coated and Uncoated Free Form Fabricated CoCr Implants : A Comparative Study in Rabbit
- 2009
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In: Journal of Biomedical Materials Research - Part B Applied Biomaterials. - : Wiley. - 1552-4973 .- 1552-4981. ; 91B:1, s. 122-127
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Journal article (peer-reviewed)abstract
- The purpose of this study was to compare the integration in bone of uncoated free form fabricated cobalt chromium (CoCr) implants to the same implant with a calcium aluminate coating. The implants of cylindrical design with a pyramidal surface structure were press-fit into the limbs of New Zealand white rabbits. After 6 weeks, the rabbits were sacrificed, and samples were retrieved and embedded. Ground sections were subjected to histological analysis and histomorphometry. The section counter part was used for preparing an electron transparent transmission electron microscopy sample by focused ion beam milling. Calcium aluminate dip coating provided a significantly greater degree of bone contact than that of the native CoCr. The gibbsite hydrate formed in the hardening reaction of the calcium aluminate was found to be the exclusive crystalline phase material in direct contact with bone.
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