| 1. |
- Sundqvist, Bertil, et al.
(author)
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Physical properties of pressure polymerized C60
- 1996
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In: Proceedings of the Symposium on Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials. - Pennington, NJ : Electrochemical Society, Incorporated. - 1566771625 ; , s. 1014-1028
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Conference paper (peer-reviewed)
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| 2. |
- Forsberg, Urban, 1971-, et al.
(author)
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Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
- 1998
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In: Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997. ; , s. 1133-1136
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Conference paper (peer-reviewed)abstract
- Epitaxial films of high quality AlN have been grown on SiC substrates at 1200 °C and 1450 °C, using a hot-wall CVD reactor. The thickness of the epitaxial layers were measured using room temperature infrared reflectance. To verify the crystal quality, X-ray diffraction (XRD) rocking curves of the ALN 0002 peak were measured. A 250 Å thick film grown at 1450°C had a full width half maximum (FWHM) of 42 arcsec, whereas a 1000 Å thick film grown at 1200 °C had a FWHM of 100 arcsec. A TEM image of the sample grown at the lower temperature showed thickness of around 950 Å, thereby verifying the infrared reflectance measurements. We conclude that the higher temperature the better the crystal quality we obtain.
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| 3. |
- MacMillan, Mike F., et al.
(author)
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Infrared Reflectance of Extremely Thin AlN Epi Films Deposited on SiC Substrates
- 1998
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In: Materials Science Forum Vols. 264-268. ; , s. 649-652
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Conference paper (peer-reviewed)abstract
- The room temperature reflectance of thin (£ 1000Å) AlN epi-films deposited on n type 6H SiC has been measure. These epi-films are too thin to produce interference fringes, from which epi-films thickness is often extracted, within the measured spectral region. However, features from the AlN reststrahl reflectance band can be clearly seen for AlN epi-films as thin as 250Å. Thicknesses are extracted from the measured spectra by comparing them directly to calculated spectra with the epi-film thickness being the only fitting parameter. The accuracy of these thickness determinations is confirmed by comparing them to thickness measured on samples studied by cross sectional TEM.
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| 4. |
- Persson, P. O. Å, et al.
(author)
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Transmission electron microscopy investigation of defects in B-implanted 6H-SiC
- 1998
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In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97. - : Trans Tech Publications Inc.. - 0878497900 ; , s. 413-416
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Conference paper (peer-reviewed)abstract
- Silicon carbide is due to its wide bandgap, high saturated electron drift velocity, high electric breakdown field and high thermal conductivity a suitable material for electron devices operating at high temperatures, high powers and high frequencies.[1,2] In order for SIC to reach its full potential in device technology, doping is essential. Usually ion implantation is used for doping since diffusion is difficult in SiC. Boron is a useful material for implantation because of its low atomic weight and greater penetration depth than other accepters, yet very few studies have been conducted on B-implanted 6H-SiC. [3,4] In this investigation we have used transmission electron microscopy (TEM) to study structural defects that are found in B-implanted 6H-SiC layers.
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