| 1. |
- Chen, Daru, et al.
(author)
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Wavelength-spacing continuously tunable multiwavelength erbium-doped fibre laser based on DSF and MZI
- 2007
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 43:9, s. 524-525
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Journal article (peer-reviewed)abstract
- A novel multiwavelength erbium-doped fibre laser is proposed by incorporating a section of dispersion-shifted fibre (DSF) and a Mach-Zehnder interferometer (MZI). The wavelength spacing of the fibre laser can be continuously tuned by adjusting an optical variable delay line in the MZI-based comb filter. Stable multiwavelength lasing at room temperature with the standard ITU (International Telecommunication Union) channel spacing of 0.2 nm (25 GHz), 0.4 nm (50 GHz), 0.8 nm (100 GHz) or 1.6 nm (200 GHz) is demonstrated.
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| 2. |
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| 3. |
- Gao, Shiming, et al.
(author)
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Bandwidth enhancement methods of telecom-region entangled twin photons via quasi-phase-matched spontaneous parametric down-conversion
- 2006
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In: Journal of nonlinear optical physics and materials. - 0218-8635. ; 15:4, s. 513-521
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Journal article (peer-reviewed)abstract
- We theoretically present the bandwidth enhancement methods of the telecom-region entangled twin photons generated by quasi-phase-matched (QPM) spontaneous parametric down-conversion (SPDC) in periodically poled lithium niobate (PPLN) crystals. By using type I (e --> e + e) SPDC, the degenerate entangled twin photons will have a broad bandwidth and it can be further enhanced by shortening the crystal length, detuning the pump wavelength or adjusting the working temperature of the PPLN crystal. This principle provides the possibility to introduce wavelength-division-multiplexed technique into quantum information systems.
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| 4. |
- Han, Tiantian, et al.
(author)
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Room-temperature photoluminescence of doped 4H-SiC film grown on AlN/Si(100)
- 2007
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In: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 86:1, s. 145-149
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Journal article (peer-reviewed)abstract
- Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150 degrees C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37 eV. By the combination of experimental measurements and theoretical analysis, the origins of the PL emission peaks have been identified and associated with N donors, Al acceptors in the 4H-SiC films and the band-to-band transition between the second minimum of the conduction band and the top of valance band of the 4H-SiC. The room-temperature SiC PL can be much utilized for optoelectronic high-power, high-frequency and high-temperature applications in the ultraviolet spectral regime.
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