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Träfflista för sökning "WFRF:(Rorsman Niklas) srt2:(2000-2004)"

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1.	Mellberg, Anders, 1965, et al. (author) Cryogenic 2--4 GHz ultra low noise amplifier 2004 In: IEEE MTT-S International Microwave Symposium Digest. ; , s. 161-163 Conference paper (peer-reviewed)
2.	Andersson, Kristoffer, 1976, et al. (author) C-Band Linear Resistive Wide Bandgap FET Mixers 2003 In: IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 8- Conference paper (peer-reviewed)
3.	Andersson, Kristoffer, 1976, et al. (author) Resistive SiC-MESFET mixer 2002 In: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1531-1309 .- 1558-1764. ; 12:4, s. 119-121 Journal article (peer-reviewed)abstract A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
4.	Desmaris, Vincent, 1977, et al. (author) High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire 2004 In: Materials Science Forum. ; 457-460:2, s. 1629- Conference paper (peer-reviewed)
5.	Desmaris, Vincent, 1977, et al. (author) Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures 2004 In: Electrochemical and Solid-State Letters. ; 7:4, s. G72- Journal article (peer-reviewed)
6.	Desmaris, Vincent, 1977, et al. (author) Research and development of AlGaN/GaN HEMTs 2001 In: GHZ2001. Conference paper (peer-reviewed)
7.	Desmaris, Vincent, 1977, et al. (author) Research and development of AlGaN/GaN HEMTs 2003 In: GHz2003. Conference paper (peer-reviewed)
8.	Dynefors, Kristina, 1977, et al. (author) research and development of SiC Static Induction transistor 2003 In: GHz2003 conference, Linköping 2003. Conference paper (other academic/artistic)abstract A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps, due to the self-aligned process used for mesa, ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process, why dimensions are not optimised. Mesa widths of 2, 3, 4 and 5 µm are processed. Since the process is scalable, better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.
9.	Dynefors, Kristina, 1977, et al. (author) Simple self-aligned fabrication process for silicon carbide static induction transistors 2004 In: Materials Science Forum. ; 457-460, s. 1125- Journal article (peer-reviewed)
10.	Lundh, Ros-Marie, et al. (author) Processing of RF-MEMS Switches 2004 In: MEMSWAVE, June 30-July 2, 2004, Uppsala, Sweden. Conference paper (peer-reviewed)

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Result 1-10 of 15

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Type of publication: conference paper (9); journal article (6)

Type of content: peer-reviewed (14); other academic/artistic (1)

Author/Editor: Rorsman, Niklas, 196 ... (14); Zirath, Herbert, 195 ... (13); Eriksson, Joakim, 19 ... (8); Desmaris, Vincent, 1 ... (7); Mellberg, Anders, 19 ... (4); Dynefors, Kristina, ... (3); show more...; Kollberg, Erik, 1937 (2); Andersson, Kristoffe ... (2); Malmkvist, Mikael, 1 ... (2); Grahn, Jan, 1962 (2); Starski, Piotr, 1947 (2); Angelov, Iltcho, 194 ... (1); Wadefalk, Niklas, 19 ... (1); Olsson, Jörgen (1); Enoksson, Peter, 195 ... (1); Vestling, Lars (1); Rorsman, Niklas (1); Sudow, Mattias, 1980 (1); Nilsson, Per-Åke, 19 ... (1); Ankarcrona, Johan (1); Eklund, Klas-Håkan (1); Stenarson, Jörgen, 1 ... (1); Zirath, H (1); Derneryd, Anders (1); Lundh, Ros-Marie (1); Chen, Yangjian (1); Chandra Saha, Shimul (1); Choumas, Emmanuil (1); Nicols, Samuel P., 1 ... (1); Fager, C (1); show less...

University: Chalmers University of Technology (14); Uppsala University (1)

Language: English (15)

Research subject (UKÄ/SCB): Engineering and Technology (15)

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