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- Kukli, Kaupo, et al.
(author)
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Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
- 2004
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In: Journal of Applied Physics. ; 96:9, s. 5298-5307
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Journal article (peer-reviewed)abstract
- Hf02 films were atomic layer deposited from HfCl4 and H20 onSi(lOO) in the temperature range of 226-750 °C. The films consisted of dominantly the monoclinic polymorph. Elastic recoildetection analysis revealed high residual chlorine and hydrogen contents (2-5 at. %) in the films grown below 300-350 °C. The content of residual hydrogen and chlorine monotonouslydecreased with increasing growth temperature. The effctive permittivity insignificantly depended on thegrowth temperature and water partial pressure. Capacitance-voltage curves exhibited market hysteresis especially in the films grown at 400-450 ° C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750 °C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear change; in the capacitance of the dielectric layer.
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