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Träfflista för sökning "WFRF:(Sajavaara Timo) srt2:(2002-2004)"

Search: WFRF:(Sajavaara Timo) > (2002-2004)

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1.
  • Kukli, Kaupo, et al. (author)
  • Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
  • 2004
  • In: Journal of Applied Physics. ; 96:9, s. 5298-5307
  • Journal article (peer-reviewed)abstract
    • Hf02 films were atomic layer deposited from HfCl4 and H20 onSi(lOO) in the temperature range of 226-750 °C. The films consisted of dominantly the monoclinic polymorph. Elastic recoildetection analysis revealed high residual chlorine and hydrogen contents (2-5 at. %) in the films grown below 300-350 °C. The content of residual hydrogen and chlorine monotonouslydecreased with increasing growth temperature. The effctive permittivity insignificantly depended on thegrowth temperature and water partial pressure. Capacitance-voltage curves exhibited market hysteresis especially in the films grown at 400-450 ° C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750 °C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear change; in the capacitance of the dielectric layer.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Hårsta, Anders (2)
Lu, Jun (2)
Sajavaara, Timo (2)
Sundqvist, Jonas (2)
Kukli, Kaupo (2)
Ritala, Mikko (2)
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Aarik, Jaan (2)
Leskelä, Markku (2)
Aidla, Aleks (1)
Uustare, Teet (1)
Pung, Lembit (1)
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University
Uppsala University (2)
Language
English (2)
Research subject (UKÄ/SCB)
Natural sciences (2)

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