| 1. |
- Bring, Martin, 1977, et al.
(author)
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Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution
- 2006
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In: Journal of Micromechanics and Microengineering. - 1361-6439 .- 0960-1317. ; 16:6, s. 68-74
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Journal article (peer-reviewed)abstract
- A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The method is based on a three-point bend chevron test and is applicable especially for small bonded structures. Using an ordinary surface profiler the method is suitable for determining the mode I fracture toughness, K Ic , of bonded areas from 5 × 5 νm 2 to 20 × 20 νm 2 in size. The method is compared quantitatively to the double cantilever beam (DCB) test. Measurements show that the average K Ic value determined using this method is in close accordance with K Ic values measured using the DCB method but a larger spread is observed which may be dedicated to a real spatial variation of K Ic shown by the higher spatial resolution of the presented method. © 2006 IOP Publishing Ltd.
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| 3. |
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| 4. |
- Enoksson, Peter, 1957, et al.
(author)
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Wafer bonding for MEMS
- 2005
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In: Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applic, Canadaations, Quebec City.
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Conference paper (peer-reviewed)
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| 5. |
- Nafari, Alexandra, 1980, et al.
(author)
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MEMS sensor for in situ TEM-nanoindentation with simultaneous force and current measurements
- 2009
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In: MicroMechanics Europe 2009. ; , s. 4-
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Conference paper (peer-reviewed)abstract
- Nanoindentation is a material testing method frequently used for studies of mechanical properties on the nano scale. Today, nanoindentation is also performed in situ a Transmission Electron Microscope (TEM), in order to simultaneously monitor the substrate with high resolution imaging. Here we present an extension of TEM-Nanoindention, utilizing custom designed MEMS sensor for in situ TEM use that enables simultaneous force and current measurements. The sensor is intended to be operated in electrostatic feedback mode and enable ultra high resolution TEM imaging. The design and fabrication of the sensor is presented here. Preliminary measurements show that the fabrication has been successful.
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| 6. |
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| 7. |
- Raeissi, Bahman, 1979, et al.
(author)
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Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces
- 2006
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In: Proceeding of 210th ECS Meeting, Semiconductor Wafer Bonding 9: Science, Technology, and Applications, Vol. 3, No .6. - : The Electrochemical Society. ; 3:6, s. 217-226
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Journal article (peer-reviewed)abstract
- The bonding energy of low-temperature plasma bonded silicon-silicon interfaces is correlated with their electrical properties. From current versus voltage and capacitance versus voltage data, mobile ion charges are shown to play a considerable role for the bond force. By comparing the evolution of the bonding strength during the first 48 hours after bonding with that of ionic charge in the interlayer and interface electron state concentrations, we demonstrate a relation between these quantities for low temperature plasma bonded silicon surfaces. The results suggest that mobile ions in an interfacial layer change the charge distribution, resistance, capacitance, interface state density distributions and correlate with the bonding energy of the silicon-silicon junction.
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| 8. |
- Raeissi, Bahman, 1979, et al.
(author)
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Wafer bonding strength increased by mobile ions
- 2009
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In: Proceeding of EUROSOI 2009. ; , s. 99-100
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Conference paper (peer-reviewed)abstract
- Mechanical bonding energies of oxygen plasma treated androom temperature wafer bonded silicon surfaces have beenmeasured as a function of storage time in parallel withmeasurements of electrical interface properties. We find that the surface energy increases with a time dependence similar to that of decreasing interface state concentration. The current versus voltage behaviour reveals the existence of mobile ions. We conclude that these mobile charges after reaction with the interface states give rise to the increased surface energy responsible for the bonding.
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| 9. |
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| 10. |
- Schaller, Vincent, 1979, et al.
(author)
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Development of an electrowetting-based microfluidic platform for magnetic immunoassays
- 2009
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In: 13th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2009; Jeju; South Korea; 1 November 2009 through 5 November 2009. - 9780979806421 ; , s. 85-87
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Conference paper (peer-reviewed)abstract
- We report the transport of magnetic nanoparticles (MNPs) in suspension in a 2 μl de-ionized water droplet (DIWD) using ElectroWetting-On-Dielectic (EWOD) actuation, and the detection of the MNPs by magnetic AC-susceptibility measurements using a highly sensitive high-Tc dc Superconducting Quantum Interference Device (SQUID) gradiometer. These results constitute the first development step towards a MNP-based magnetic immunoassay platform with SQUID-readout and sample droplet handling.
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