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Search: WFRF:(Schimmel H.) > (2013)

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1.
  • Kaiser, M., et al. (author)
  • Polycrystalline SiC as source material for the growth of fluorescent SiC layers
  • 2013
  • In: Silicon Carbide And Related Materials 2012. - : Trans Tech Publications Inc.. - 9783037856246 ; , s. 39-42
  • Conference paper (peer-reviewed)abstract
    • Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
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2.
  • Schimmel, S., et al. (author)
  • Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  • 2013
  • In: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. - 9783037856246 ; , s. 185-188
  • Conference paper (peer-reviewed)abstract
    • Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
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