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| 2. |
- Chen, Hui, et al.
(author)
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Thickness Dependence of Optical Transmittance of Transparent Wood : Chemical Modification Effects
- 2019
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In: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 11:38, s. 35451-35457
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Journal article (peer-reviewed)abstract
- Transparent wood (TW) is an emerging optical material combining high optical transmittance and haze for structural applications. Unlike nonscattering absorbing media, the thickness dependence of light transmittance for TW is complicated because optical losses are also related to increased photon path length from multiple scattering. In the present study, starting from photon diffusion equation, it is found that the angle-integrated total light transmittance of TW has an exponentially decaying dependence on sample thickness. The expression reveals an attenuation coefficient which depends not only on the absorption coefficient but also on the diffusion coefficient. The total transmittance and thickness were measured for a range of TW samples, from both acetylated and nonacetylated balsa wood templates, and were fitted according to the derived relationship. The fitting gives a lower attenuation coefficient for the acetylated TW compared to the nonacetylated one. The lower attenuation coefficient for the acetylated TW is attributed to its lower scattering coefficient or correspondingly lower haze. The attenuation constant resulted from our model hence can serve as a singular material parameter that facilitates cross-comparison of different sample types, at even different thicknesses, when total optical transmittance is concerned. The model was verified with two other TWs (ash and birch) and is in general applicable to other scattering media.
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| 3. |
- Chulapakorn, Thawatchart, 1988-, et al.
(author)
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Impact of H-uptake by forming gas annealing and ion implantation on photoluminescence of Si-nanoparticles
- 2018
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In: Physica Status Solidi (a) applications and materials science. - : John Wiley & Sons. - 1862-6300 .- 1862-6319. ; 215:3
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Journal article (peer-reviewed)abstract
- Silicon nanoparticles (SiNPs) are formed by implanting 70 keV Si+ into a SiO2-film and subsequent thermal annealing. SiNP samples are further annealed in forming gas. Another group of samples containing SiNP is implanted by 7.5 keV H+ and subsequently annealed in N2-atmosphere at 450 °C to reduce implantation damage. Nuclear reaction analysis (NRA) is employed to establish depth profiles of the H-concentration. Enhanced hydrogen concentrations are found close to the SiO2surface, with particularly high concentrations for the as-implanted SiO2. However, no detectable uptake of hydrogen is observed by NRA for samples treated by forming gas annealing (FGA). H-concentrations detected after H-implantation follow calculated implantation profiles. Photoluminescence (PL) spectroscopy is performed at room temperature to observe the SiNP PL. Whereas FGA is found to increase PL under certain conditions, i.e., annealing at high temperatures, increasing implantation fluence of H reduces the SiNP PL. Hydrogen implantation also introduces additional defect PL. After low-temperature annealing, the SiNP PL is found to improve, but the process is not found equivalently efficient as conventional FGA.
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| 4. |
- Chulapakorn, Thawatchart, 1988-, et al.
(author)
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Influence of Swift Heavy Ion Irradiation on the Photoluminescence of Si-nanoparticles and Defects in SiO2
- 2017
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In: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 28:37
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Journal article (peer-reviewed)abstract
- The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.
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| 5. |
- Chulapakorn, Thawatchart, 1988-, et al.
(author)
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Luminescence of silicon nanoparticles from oxygen implanted silicon
- 2018
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In: Materials Science in Semiconductor Processing. - : Elsevier. - 1369-8001 .- 1873-4081. ; 86, s. 18-22
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Journal article (peer-reviewed)abstract
- Oxygen with a kinetic energy of 20 keV is implanted in a silicon wafer (100) at different fluences, followed by post-implantation thermal annealing (PIA) performed at temperatures ranging from 1000 to 1200 degrees C, in order to form luminescent silicon nanoparticles (SiNPs) and also to reduce the damage induced by the implantation. As a result of this procedure, a surface SiOx layer (with 0 < x < 2) with embedded crystalline Si nanoparticles has been created. The samples yield similar luminescence in terms of peak wavelength, lifetime, and absorption as recorded from SiNPs obtained by the more conventional method of implanting silicon into silicon dioxide. The oxygen implantation profile is characterized by elastic recoil detection (ERD) technique to obtain the excess concentration of Si in a presumed SiO2 environment. The physical structure of the implanted Si wafer is examined by grazing incidence X-ray diffraction (GIXRD). Photoluminescence (PL) techniques, including PL spectroscopy, time-resolved PL (TRPL), and photoluminescence excitation (PLE) spectroscopy are carried out in order to identify the PL origin. The results show that luminescent SiNPs are formed in a Si sample implanted by oxygen with a fluence of 2 x 10(17) atoms cm(-2) and PIA at 1000 degrees C. These SiNPs have a broad size range of 6-24 nm, as evaluated from the GIXRD result. Samples implanted at a lower fluence and/or annealed at higher temperature show only weak defect-related PL. With further optimization of the SiNP luminescence, the method may offer a simple route for integration of luminescent Si in mainstream semiconductor fabrication.
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| 6. |
- Chulapakorn, Thawatchart, 1988-, et al.
(author)
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MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2-thin films
- 2016
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In: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley-VCH Verlagsgesellschaft. - 1862-6351 .- 1610-1634 .- 1610-1642. ; 13:10-12, s. 921-926
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Journal article (peer-reviewed)abstract
- The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO2 by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∼ μs), and ii) fast-decay PL, possibly due to oxide-related defects (λ ∼ 575-690 nm, τ ∼ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers.
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| 7. |
- Chulapakorn, Thawatchart, 1988-, et al.
(author)
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Si-nanoparticle synthesis using ion implantation and MeV ion irradiation
- 2015
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In: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley-VCH Verlagsgesellschaft. - 1862-6351.
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Journal article (peer-reviewed)abstract
- A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO2 matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO2 by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV 127I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence.
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| 8. |
- Greben, Michael, et al.
(author)
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Non-exponential decay kinetics: Correct assessment and description illustrated by slow luminescence of Si nanostructures
- 2019
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In: Applied spectroscopy reviews (Softcover ed.). - : Informa UK Limited. - 0570-4928 .- 1520-569X. ; 54, s. 758-801
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Journal article (peer-reviewed)abstract
- The treatment of time-resolved (TR) photoluminescence (PL) decay kinetics is analysed in details and illustrated by experiments on semiconductor quantum dots, namely silicon nanocrystals (Si NCs). We consider the mono-, stretch- and multi-exponential as well as lognormal (LN) and some complex decay models for continuous and discrete distribution of rates (lifetimes). A particular attention is devoted to the thorough analysis of non-exponential decay kinetics. We explicitly show that a LN distribution of emitter sizes may results in LN distribution of decay rates. On the other hand, the distribution of rates cannot be, strictly speaking, Levy stable distribution (that results in the stretched-exponential decay). We introduce theoretical background and derive expressions to calculate the average decay lifetimes for some common decays with practical examples of their applications. Experimental aspects are discussed with special attention devoted to the major problems of the accurate TR PL data treatment, including background uncertainty, pulse duration, system response function etc. Finally, a thorough literature survey of TR PL in Si NCs is given. The methods and definitions outlined in this systematic review are applicable to various other material systems with slow decay like rare-earth and transition metal-doped materials, amorphous semiconductors, type-II heterostructures, singlet oxygen phosphorescence etc.
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| 9. |
- Hormozan, Yashar, et al.
(author)
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High-resolution x-ray imaging using a structured scintillator
- 2016
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In: Medical physics (Lancaster). - : American Association of Physicists in Medicine. - 0094-2405. ; 43:2, s. 696-701
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Journal article (peer-reviewed)abstract
- Purpose: In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Methods: Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator array to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. Results: The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. Conclusions: The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.
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| 10. |
- Li, Yuanyuan, et al.
(author)
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Luminescent Transparent Wood
- 2017
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In: Advanced Optical Materials. - : John Wiley & Sons. - 2195-1071. ; 5:1
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Journal article (peer-reviewed)abstract
- Luminescent transparent wood is prepared by combining the complementary properties of naturally grown anisotropic porous wood and luminescent quantum dots. The wood structure introduces strong diffused luminescence and waveguiding, which can potentially be exploited for optoelectronic and photovoltaic applications, such as for planar illumination sources and luminescent buildings/furniture. Images below show the transparency, haze, and luminescence of quantum dot wood.
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