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Träfflista för sökning "WFRF:(Taleb S) srt2:(2010-2014)"

Search: WFRF:(Taleb S) > (2010-2014)

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1.
  • Ndiaye, W., et al. (author)
  • Bulk electronic structure of Mn5Ge3/Ge(111) films by angle-resolved photoemission spectroscopy
  • 2013
  • In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 87:16
  • Journal article (peer-reviewed)abstract
    • Mn5Ge3(001) thin films grown on Ge(111)-c(2 x 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the Gamma ALM plane and in the Gamma AHK plane are in agreement with simulations starting with band structure calculations based on the density functional theory. This provides a unique validation of band structure calculations for a proper description of the electronic properties of Mn5Ge3. Only the spectral feature very close to the Fermi level cannot be well explained by the simulation. This departure is discussed in terms of the three-dimensional nature of the sample and of correlation effects.
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2.
  • Wang, F., et al. (author)
  • Silicon intercalation into the graphene-SiC interface
  • 2012
  • In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 85:16
  • Journal article (peer-reviewed)abstract
    • In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.
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