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- Szymanski, J. J., et al.
(author)
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A study of the decay mu –> e gamma by the MEGA experiment
- 1996
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In: Proceedings, 9th Meeting, DPF'96, Minneapolis, USA, August 11-15, 1996. Vol. 1, 2.. ; , s. 1450-1452
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Conference paper (peer-reviewed)
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| 2. |
- Hoganson, C W, et al.
(author)
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A hydrogen-atom abstraction model for the function of Y-Z in photosynthetic oxygen evolution
- 1995
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In: Photosynthesis Research. - 0166-8595. ; 46:1-2, s. 177-184
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Journal article (peer-reviewed)abstract
- Recent magnetic-resonance work on Y-Z suggests that this species exhibits considerable motional flexibility in its functional site and that its phenol oxygen is not involved in a well-ordered hydrogen-bond interaction (Tang et al., submitted; Tommos et al., in press). Both of these observations are inconsistent with a simple electron-transfer function for this radical in photosynthetic water oxidation. By considering the roles of catalytically active amino acid radicals in other enzymes and recent data on the water-oxidation process in Photosystem II, we rationalize these observations by suggesting that Y-Z functions to abstract hydrogen atoms from aquo- and hydroxy-bound manganese ions in the (Mn)(4) cluster on each S-state transition. The hydrogen-atom abstraction process may occur either by sequential or concerted kinetic pathways. Within this model, the (Mn)(4)/Y-Z center forms a single catalytic center that comprises the Oxygen Evolving Complex in Photosystem II.
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| 5. |
- Sargeson, A. M., et al.
(author)
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Names and symbols for the transfermium elements
- 1997
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In: Pure and Applied Chemistry. - : Walter de Gruyter GmbH. - 0033-4545 .- 1365-3075. ; 69:12, s. 2471-2473
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Journal article (peer-reviewed)abstract
- The recommendations (ref. 1) of the Commission on Nomenclature of Inorganic Chemistry (CNIC) on the nomenclature of the transfermium elements (101-109, inclusive) were considered by the IUPAC Bureau at Guildford (UK) in September 1995. As a result of the various criticisms of the recommendations and theway that they had been processed, the Bureau decided to adopt the recommendations as provisional and to circulate them to national/regional nomenclature centres in the normal way, with notices to be published innational/regional chemistry journals and magazines, requesting submission of comments to CNIC. In particular, the National Adhering Organizations (NAOs) were invited to express their views concerning the extant proposals for the names of these elements and the principles and traditions used to derive them. The response from the general chemical community was small, and the bulk of the replies came from nuclear scientists.
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| 7. |
- Zetterling, Carl-Mikael, et al.
(author)
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Investigation of aluminum nitride grown by metal-organic chemical-vapor deposition on silicon carbide
- 1997
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 82:6, s. 2990-2995
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Journal article (peer-reviewed)abstract
- Undoped single crystalline aluminum nitride films were grown on 4H and 6H SiC substrates using metal-organic chemical-vapor deposition at 1200°C. From in situ reflection high-energy electron diffraction, x-ray diffraction rocking curves, and cathodoluminescence spectra, the crystallinity of the films was confirmed. Atomic force microscopy showed that some films were substantially dominated by island growth, rather than step flow growth. Aluminum was evaporated to form metal-insulator-semiconductor (MIS) capacitors for high-frequency capacitance voltage measurements carried out at room temperature. Low leakage made it possible to measure the structures and characterize accumulation, depletion, deep depletion, and, in some cases, inversion. From independent optical thickness measurements, the relative dielectric constant of aluminum nitride was confirmed at 8.4. The flatband voltage of the AlN MIS capacitors on p-type SiC was close to the theoretical value expected. The films were stressed up to 60 V (3 MV/cm) without breakdown, but excessive leakage currents (>0.1 A/cm2), probably dominated by grain-boundary conduction, shifted the flatband voltage of the capacitors. These results indicate the possibility of replacing silicon dioxide with aluminum nitride in SiC field effect transistors using insulated gates.
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