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| 2. |
- Anderson, Jonathan, 1975, et al.
(author)
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Thin graphite overlayers: Graphene and alkali metal intercalation
- 2007
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In: Surface Science. - : Elsevier BV. - 0039-6028. ; 601:4, s. 1167-1175
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Journal article (peer-reviewed)abstract
- Using LEED and angle resolved photoemission for characterisation we have prepared graphite overlayers with down to monolayer thickness by heating SiC crystals and monitored alkali metal intercalation for the multilayer films. The valence band structure of the monolayer is similar to that calculated for graphene though downshifted by around 0.8 eV and with a small gap at the zone corner. The shift suggests that the transport properties, which are of much present interest, are similar to that of a biased graphene sample. Upon alkali metal deposition the 3D character of the pi states is lost and the resulting band structure becomes graphene like. A comparison with data obtained for ex situ prepared intercalation compounds indicates that the graphite film has converted to the stage I compounds C8K or CgRb. Advantages with the present preparation method is that the graphite film can be recovered by desorbing small amounts of alkali metal and that the progress of compound formation can be monitored. The energy shifts measured after different deposits indicate that saturation is reached in three steps. Our interpretation is that in the first the alkali atoms are dispersed while the final steps are characterized by the formation of first one and then a second (2 x 2) ordered alkali metal layer adjacent to the uppermost carbon layer. (c) Elsevier B.V. All rights reserved.
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| 3. |
- Joco, V., et al.
(author)
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Surface phase transition and electronic structure of c(5 root 2 x root 2)R45 degrees-Pb/Cu(100)
- 2006
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In: Proceedings of the 23th European Conference on Surface Science (Surface Science). - : Elsevier BV. - 0039-6028. ; 600:18, s. 3851-3855
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Conference paper (peer-reviewed)abstract
- The c(5 root 2 x root 2)R45 degrees-Pb/Cu(100) surface phase is investigated by means of angle resolved ultraviolet photoemission and low energy electron diffraction in the temperature range between 300 and 550 K. We identify and characterize a temperature-induced surface phase transition at 440 K from the room temperature e(5 root 2 x root 2) R45 degrees phase to a (root 2 x root 2)R45 degrees structure with split superstructure spots. The phase transition is fully reversible and takes place before the two-dimensional melting of the structure at 520 K. The electronic structure of the split (root 2 x root 2)R45 degrees phase is characterized by a metallic free-electron like surface band. This surface band is backfolded with c(5 root 2 x root 2)R45 degrees periodicity phase at room temperature, giving rise to a surface band gap at the Fermi energy. We propose that a gain in electronic energy explains in part the stability of the c(5 root 2 x root 2)R45 degrees phase. (c) 2006 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
- Kihlgren, T, et al.
(author)
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K/graphite: Uniform energy shifts of graphite valence states
- 2006
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In: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 600:5, s. 1160-1164
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Journal article (peer-reviewed)abstract
- Ultra-thin graphite overlayers prepared by heating SiC crystals can give highly resolved valence band photoemission spectra. This is exploited to monitor K deposition induced energy shifts of graphite valence band states. States near the corners of the Brillouin zone, responsible for the semimetal character of graphite, are observed to show shifts that are nearly equal to the shifts of the uppermost filled sigma state and of an empty state 7.6 eV above EF. The results give credence to the rigid band shift model often used to discuss the electronic structure and charge transfer for graphite ad- and absorption systems. (c) 2006 Elsevier B.V. All rights reserved.
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| 6. |
- Kuzmin, M., et al.
(author)
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Atomic and electronic structure of the Yb/Ge(111)-(3x2) surface studied by high-resolution photoelectron spectroscopy
- 2007
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 75
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Journal article (peer-reviewed)abstract
- Using high-resolution synchrotron-radiation photoelectron spectroscopy and low-energy electron diffraction, we have studied the electronic and structural properties of the Yb-induced Ge(111)-(3x2) reconstruction with a 1/6 monolayer coverage. We found these properties to be similar in many respects to those of the metal-induced Si(111) and Ge(111) reconstructions described previously in terms of the honeycomb chain-channel (HCC) structure. In particular, the Yb/Ge(111)-(3x2) is revealed to have a semiconducting character, the Yb atoms are divalent, and the surface states observed for the Yb/Ge(111) closely resemble those of the Na/Ge(111)-(3x1) in the literature. The Ge 3d core-level analysis, however, shows that the Ge 3d spectra from Yb/Ge(111)-(3x2) drastically differ from corresponding spectra of other Si and Ge HCC reconstructions. An atomic model, based on the general HCC geometry, is proposed for the Yb/Ge(111)-(3x2) surface. In this model, the important structural aspects are a buckling of the Ge = Ge double bond in the top, HCC-reconstructed layer plus a strong rearrangement of the second-layer atoms.
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| 7. |
- Kuzmin, M., et al.
(author)
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Yb-induced (2x3) and (2x4) reconstructions on Si(100) studied by first-principles calculations and high-resolution core-level photoelectron spectroscopy
- 2008
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 78:4
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Journal article (peer-reviewed)abstract
- We report here a combined theoretical and experimental study of Yb/Si(100)-(2x3) and -(2x4) reconstructions by means of first-principles calculations and high-resolution core-level photoelectron spectroscopy. Energetically stable atomic structures are presented for these reconstructions. Yb atoms are found to occupy the cave sites in the structures, and the Si substrate is strongly rearranged due to Yb adsorption. It is shown that scanning tunneling microscopy images and surface core-level shifts (SCLSs) calculated for these atomic configurations agree with experimental data, giving further support to the models. In addition, by comparing our theoretical and experimental Si 2p results, we discuss and interpret the atomic origins of SCLSs measured for the YbSi(100)-(2x3)/(2x4). Finally, the results presented are helpful in the analysis of (2x3) and (2x4) structures induced by other rare earth metals on Si(100).
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| 9. |
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| 10. |
- Martinez-Blanco, J, et al.
(author)
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Surface phase diagram and temperature induced phase transitions of Sn/Cu(100)
- 2006
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In: Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 (Applied Surface Science). - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5331-5334
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Conference paper (peer-reviewed)abstract
- Room temperature deposition of Sn on Cu(100) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 x 2) (for 0.2 ML), p(2 x 6) (for 0.33 ML), (3 root 2 x root 2)R45 degrees (for 0.5 ML), and c(4 x 4) (for 0.65 ML). We find a new phase with a ((-4)(0) (2)(4)) structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the (3 root 2 x root 2)R45 degrees phase becomes (root 2 x root 2)R45 degrees phase above 360 K, and the new ((-4)(0) (2)(4)) phase becomes p(2 x 2) also above 360 K. The origin of these two-phase transitions is discussed. (c) 2005 Elsevier B.V. All rights reserved.
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