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- Mårtensson, Thomas, et al.
(author)
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Epitaxial III-V nanowires on silicon
- 2004
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 4:10, s. 1987-1990
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Journal article (peer-reviewed)abstract
- We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
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2. |
- Seifert, Werner, et al.
(author)
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Growth of one-dimensional nanostructures in MOVPE
- 2004
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
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Journal article (peer-reviewed)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
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