| 1. |
- Abt, I, et al.
(author)
-
Inclusive V-0 production cross sections from 920 GeV fixed target proton-nucleus collisions
- 2003
-
In: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 29:2, s. 181-190
-
Journal article (peer-reviewed)abstract
- Inclusive differential cross sections dsigma(pA)/dx(F) and dsigma(pA)/dp(t)(2) for the production of K-S(0), Lambda, and (&ULambda;) over bar particles are measured at HERA in proton-induced reactions on C, Al, Ti, and W targets. The incident beam energy is 920 GeV, corresponding to roots = 41.6 GeV in the proton-nucleon system. The ratios of differential cross sections dsigma(pA)(K-S(0))/dsigma(pA)(Lambda) and dsigma(pA)((&ULambda;) over bar)/dsigma(pA) (Lambda) are measured to be 6.2 +/- 0.5 and 0.66 +/- 0.07, respectively, for x(F) approximate to -0.06. No significant dependence upon the target material is observed. Within errors, the slopes of the transverse momentum distributions da,Ald t also show no significant dependence upon the target material. The dependence of the extrapolated total cross sections sigma(pA) on the atomic mass A of the target material is discussed, and the deduced cross sections per nucleon sigma(pN) are compared with results obtained at other energies.
|
|
| 2. |
- Abt, I, et al.
(author)
-
Measurement of the b(b)over-bar production cross section in 920 GeV fixed-target proton-nucleus collisions
- 2003
-
In: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 26:3, s. 345-355
-
Journal article (peer-reviewed)abstract
- Using the HERA-B detector, the b (b) over bar production cross section has been measured in 920 GeV proton collisions on carbon and titanium targets. The b (b) over bar production was tagged via inclusive bottom quark decays into J/psi by exploiting the longitudinal separation of J/psi --> l(+)l(-) decay vertices from the primary proton-nucleus interaction. Both e(+)e(-) and mu(+)mu(-) channels have been reconstructed and the combined analysis yields the cross section sigma(b (b) over bar) = 32(-12)(+14)(stat) (+6)(-7)(sys) nb/nucleon.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Kasic, A., et al.
(author)
-
Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
- 2003
-
In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 0:6 SPEC. ISS., s. 1750-1769
-
Conference paper (other academic/artistic)abstract
- This work reviews recent ellipsometric investigations of the infrared dielectric functions of binary, ternary, and quaternary group-III nitride films. Spectroscopic Ellipsometry in the mid-infrared range is employed for the first time to determine phonon and free-carrier properties of individual group-III nitride heterostructure components, including layers of some ten nanometer thickness. Assuming the effective carrier mass, the free-carrier concentration and mobility parameters can be quantified upon model analysis of the infrared dielectric function. In combination with Hall-effect measurements, the effective carrier masses for wurtzite n- and p-type GaN and n-type InN are obtained. The mode behavior of both the E1(TO) and A1(LO) phonons are determined for ternary compounds. For strain-sensitive phonon modes, the composition and strain dependences of the phonon frequencies are differentiated and quantified. Information on the crystal quality and compositional homogeneity of the films can be extracted from the phonon mode broadening parameters. A comprehensive IR dielectric function database of group-III nitride materials has been established and can be used for the analysis of complex thin-film heterostructures designed for optoelectronic device applications. Information on concentration and mobility of free carriers, thickness, alloy composition, average strain state, and crystal quality of individual sample constituents can be derived. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
|
| 6. |
|
|
| 7. |
|
|
