| 1. |
- Lanni, Luigia, et al.
(author)
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500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC
- 2013
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 34:9, s. 1091-1093
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Journal article (peer-reviewed)abstract
- Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 degrees C to 500 degrees C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 degrees C - 300 degrees C it decreased when the temperature increased, while it increased in the range 300 degrees C-500 degrees C. Stable noise margins of similar to 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 degrees C to 500 degrees C for both OR and NOR output.
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| 2. |
- Lanni, Luigia, et al.
(author)
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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
- 2012
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In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 59:4, s. 1076-1083
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Journal article (peer-reviewed)abstract
- Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.
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| 3. |
- Zetterling, Carl-Mikael, 1966-
(author)
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Silicon carbide high temperature electronics - is this rocket science?
- 2013
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In: Future Trends in Microelectronics. - Hoboken, NJ, USA : Wiley. ; , s. 102-109
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Book chapter (other academic/artistic)abstract
- This chapter proposes electronics for a system capable of providing a breakthrough in planetary sciences: collection of data from the surface of Venus over extended time. The author has selected bipolar emitter coupled logic (ECL) over CMOS for integrated circuits. With this bipolar technology any electronic function can be built (amplifiers, analog-to-digital converters, power controllers, radio electronics, and digital electronics). Sensors and MEMS have also been demonstrated in silicon carbide (SiC), and could be implemented with our technology. Non-volatile memories for high temperature operation could be possible using PZT films on SiC.
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