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- Andersson, Kristoffer, 1976, et al.
(author)
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Resistive SiC-MESFET mixer
- 2002
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In: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1531-1309 .- 1558-1764. ; 12:4, s. 119-121
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Journal article (peer-reviewed)abstract
- A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
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- Angelov, Iltcho, 1943, et al.
(author)
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CMOS large signal model for CAD
- 2003
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In: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
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Conference paper (peer-reviewed)
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