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- von Haartman, Martin, et al.
(författare)
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1/f noise in Si and Si0.7Ge0.3 pMOSFETs
- 2003
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 50, s. 2513-2519
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Tidskriftsartikel (refereegranskat)abstract
- Strained layer Si0.7Ge0.3 pMOSFETs were fabricated and shown to exhibit enhanced hole mobility, up to 35% higher for a SiGe device with 3-nm-thick Si-cap, and lower 1/f noise compared to Si surface channel pMOSFETs. The 1/f noise in the investigated devices was dominated by mobility fluctuation noise and found to be lower in the SiGe devices. The source of the mobility fluctuations was determined by investigating the electric field dependence of the 1/f noise. It was found that the SiO2/Si interface roughness scattering plays an important role for the mobility fluctuation noise, although not dominating the effective mobility. The physical separation of the carriers from the SiO2/Si interface in the buried SiGe channel pMOSFETs resulted in lower SiO2/Si interface roughness scattering, which explains the reduction of 1/f noise in these devices. The 1/f noise mechanism was experimentally verified by studying 1/f noise in SiGe devices with various thicknesses of the Si-cap. A too large Si-cap thickness led to a deteriorated carrier confinement in the SiGe channel resulting in that considerable 1/f noise was generated in the parasitic current in the Si-cap. In our experiments, the SiGe devices with a Si-cap thickness in the middle of the interval 3-7 nm exhibited the lowest 1/f noise.
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| 2. |
- von Haartman, Martin, et al.
(författare)
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Influence of gate width on 50 nm gate length Si0.7Ge0.3 channel PMOSFETs
- 2003
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Ingår i: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE. ; , s. 529-532
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Konferensbidrag (refereegranskat)abstract
- Compressively strained Si0.7Ge0.3 channel pMOSFETs were fabricated and the effective hole mobility was found to be 20-30% higher in the Si0.7Ge0.3 devices than in their Si counterparts. The g(m,) normalized to gate width, was found to increase strongly with decreasing gate width in the Si0.7Ge0.3 devices, a behavior that was not found in the Si devices. All the Si0.7Ge0.3 devices down to 50 nm gate length showed enhanced g. compared to the Si devices for gate widths <1 um. At L = 50 nm and W = 0.25 mum the Si0.7Ge0.3 devices exhibited increased g(m) and I-D of about 15 %, in saturation, compared to the Si devices. I-on was 286 muA/mum and I-off was 0.23 nA/mum at V-dd = 1.5 Vfor the Si0.7Ge0.3 device.
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