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Träfflista för sökning "WFRF:(Messmer M.) srt2:(1995-1999)"

Search: WFRF:(Messmer M.) > (1995-1999)

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  • Hammar, M., et al. (author)
  • Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy
  • 1998
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 72:7, s. 815-817
  • Journal article (peer-reviewed)abstract
    • We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. © 1998 American Institute of Physics.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Anand, S. (1)
Hammar, M (1)
Lourdudoss, S. (1)
Rodriguez Messmer, E ... (1)
Luzuy, M. (1)
Landgren, G. (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
1998 (1)

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